Tc max
5.2 K
Tc ambient
—
arXiv year
2006
Papers
4
Tc exp.
5.2 K
Tc theo.
—
Evidence
experimental
Tc max measured at polycrystal, susceptibility, arXiv:cond-mat/0610134, confirmed by 4 papers
Evidence (9 records from 4 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 5.2 | — | polycrystal | susceptibility, resistivity | — | 2006 | T1 | cond-mat/0610134 |
| 5.0 | — | thin_film | susceptibility, resistivity | — | 2006 | T1 | cond-mat/0610134 |
| 3.4 | — | thin_film | susceptibility, resistivity | — | 2006 | T1 | cond-mat/0610134 |
| 3.0 | — | thin_film | resistivity | — | 2011 | T3 | 1110.0102 |
| 3.0 | — | thin_film | resistivity | — | 2010 | T1 | 1003.1284 |
| 2.5 | — | thin_film | resistivity | — | 2014 | T1 | 1401.7162 |
| 2.5 | — | thin_film | resistivity | — | 2010 | T1 | 1003.1284 |
| 2.0 | — | thin_film | resistivity | — | 2010 | T1 | 1003.1284 |
| 1.7 | — | thin_film | resistivity | — | 2010 | T1 | 1003.1284 |
Superconducting parameters
- Hc2
- 4.0 T (40 mK)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- silicon 100 wafers with a silica buffer layer
- Doping type
- hole