Tc max
51.0 K
Tc ambient
46.0 K
arXiv year
2013
Papers
4
Tc exp.
51.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at P=1.9 GPa, single_crystal, resistivity, arXiv:1310.3842, confirmed by 4 papers
Evidence (7 records from 4 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 51.0 | 1.9 | single_crystal | resistivity | — | 2013 | T1 | 1310.3842 |
| 48.0 | 0.5 | single_crystal | resistivity | — | 2013 | T1 | 1310.3842 |
| 46.0 | ambient | single_crystal | resistivity | — | 2015 | T1 | DOI: 10.1103/PhysRevB.91.224507 |
| 45.0 | — | single_crystal | resistivity, susceptibility, specific_heat | — | 2014 | T1 | 1401.1427 |
| 45.0 | — | single_crystal | susceptibility, resistivity, specific_heat, STM | — | 2014 | T1 | DOI: 10.1103/PhysRevLett.112.047005 |
| 21.0 | ambient | single_crystal | resistivity, susceptibility | — | 2015 | T1 | DOI: 10.1103/PhysRevB.91.224507 |
| 16.0 | 0.5 | single_crystal | resistivity | — | 2013 | T1 | 1310.3842 |
Structure
- Crystal structure
- ThCr2Si2-type (122)
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- single_crystal
- Doping level
- 0.140