Tc max
40.0 K
Tc ambient
—
arXiv year
2012
Papers
1
Tc exp.
40.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at ambient, thin_film, resistivity, DOI: 10.1103/PhysRevB.86.134524
Overlayer
cacuo2n
Substrate
srtio3m
Evidence (1 record from 1 paper)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 40.0 | ambient | thin_film | resistivity | — | 2012 | T1 | DOI: 10.1103/PhysRevB.86.134524 |
Structure
- Phase
- infinite_layer
Superconducting parameters
- Pairing symmetry
- d-wave
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- NdGaO3
- Pressure type
- none
- Doping type
- hole