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CaFe2As2
iron_based · ThCr2Si2 tetragonal structure
ambient SCunconventionalcompeting order
Tc max
49.0 K
Tc ambient
—
arXiv year
2008
Papers
32
Tc exp.
49.0 K
Tc theo.
0.6 K
Evidence
experimental
Tc max measured at ambient, single_crystal, arXiv:1106.2157, confirmed by 2 papers
Evidence (45 records from 32 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 49.0 | — | single_crystal | — | — | 2013 | T1 | 1309.0034 |
| 49.0 | ambient | single_crystal | — | — | 2011 | T1 | 1106.2157 |
| 42.7 | — | single_crystal | resistivity | — | 2011 | T3 | 1106.1837 |
| 40.0 | — | single_crystal | resistivity | — | 2014 | T1 | 1408.2310 |
| 30.0 | — | single_crystal | — | — | 2013 | T1 | 1309.0034 |
| 25.0 | — | single_crystal | resistivity, susceptibility | — | 2016 | T1 | 1604.04964 |
| 21.0 | ambient | single_crystal | — | — | 2011 | T1 | 1106.2157 |
| 20.0 | — | single_crystal | resistivity | — | 2014 | T1 | 1408.2310 |
| 12.0 | 0.5 | — | resistivity | — | 2008 | — | 0810.0241 |
| 12.0 | 0.5 | — | resistivity | — | 2008 | T1 | 0807.0616 |
| 12.0 | 0.5 | single_crystal | resistivity | — | 2008 | T1 | DOI: 10.1103/PhysRevLett.101.057006 |
| 12.0 | 0.3 | single_crystal | resistivity | — | 2008 | T1 | DOI: 10.1103/PhysRevLett.101.057006 |
| 12.0 | 0.6 | single_crystal | resistivity | — | 2008 | T1 | DOI: 10.1103/PhysRevLett.101.057006 |
| 11.5 | 0.1 | single_crystal | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.80.024519 |
| 11.5 | 0.1 | single_crystal | resistivity | — | 2008 | T1 | 0809.3550 |
| 10.0 | ambient | single_crystal | resistivity | — | 2012 | T1 | DOI: 10.1103/PhysRevB.85.024530 |
| 10.0 | — | single_crystal | resistivity, susceptibility | — | 2011 | T1 | 1107.0904 |
| 10.0 | 0.1 | single_crystal | resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.180506 |
| 10.0 | 0.3 | single_crystal | muSR | — | 2009 | T1 | DOI: 10.1103/PhysRevB.80.024508 |
| 10.0 | 0.7 | single_crystal | — | — | 2008 | T1 | 0807.0800 |
| 7.2 | 0.5 | — | susceptibility | — | 2009 | T1 | 0903.2011 |
| 7.2 | 0.5 | single_crystal | susceptibility | — | 2009 | T1 | DOI: 10.1103/PhysRevLett.102.227601 |
| 5.4 | 0.1 | single_crystal | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.80.024519 |
| 5.4 | 0.1 | single_crystal | resistivity | — | 2008 | T1 | 0809.3550 |
| 4.1 | 1.1 | powder | susceptibility | d-wave | 2010 | — | 1002.1114 |
| 3.9 | 0.5 | powder | susceptibility | d-wave | 2010 | — | 1002.1114 |
| 0.6 | — | — | — | — | 2009 | T1 | DOI: 10.1103/PhysRevLett.102.037003 |
| 0.6 | — | — | — | — | 2008 | T1 | 0807.3936 |
| — | — | — | — | — | 2024 | T1 | DOI: 10.1103/PhysRevResearch.6.013121 |
| — | — | — | — | — | 2023 | — | 2309.12615 |
| — | — | single_crystal | — | — | 2021 | T1 | DOI: 10.1103/PhysRevB.104.094508 |
| — | — | single_crystal | ARPES | — | 2020 | T1 | DOI: 10.1103/PhysRevMaterials.4.034801 |
| — | — | single_crystal | STM | s_pm | 2016 | T1 | 1602.04937 |
| — | — | — | specific_heat, resistivity | — | 2012 | T1 | 1205.0874 |
| — | — | single_crystal | resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.020510 |
| — | — | single_crystal | ARPES | — | 2010 | T1 | DOI: 10.1103/PhysRevB.81.060507 |
| — | — | single_crystal | resistivity | — | 2009 | T1 | 0905.4002 |
| — | — | single_crystal | susceptibility, resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.79.020511 |
| — | — | single_crystal | ARPES | — | 2009 | T1 | DOI: 10.1103/PhysRevLett.102.167004 |
| — | 0.1 | — | resistivity | — | 2009 | T1 | 0908.4415 |
| — | 0.5 | single_crystal | susceptibility | — | 2009 | T1 | DOI: 10.1103/PhysRevB.80.024519 |
| — | 0.3 | — | resistivity | — | 2008 | T1 | 0807.0616 |
| — | 0.6 | — | resistivity | — | 2008 | T1 | 0807.0616 |
| — | 0.2 | — | resistivity | — | 2008 | T1 | 0807.0616 |
| — | 0.9 | — | resistivity | — | 2008 | T1 | 0807.0616 |
Structure
- Crystal structure
- ThCr2Si2 tetragonal structure
- Space group
- I4/mmm
- Lattice a (Å)
- 3.883
- Lattice c (Å)
- 11.725
Superconducting parameters
- Hc2
- 15.0 T (H* ≈ 15 T)
- λ_eph (e–ph coupling)
- 0.23
- ω_log
- 218 K
Competing orders
- Competing order
- AFM
- T_SDW
- 170.0 K
- T_AFM
- 170.0 K
Samples & pressure
- Sample form
- single_crystal
- Pressure type
- hydrostatic
- Doping level
- 0.083