Tc max
1.1 K
Tc ambient
1.1 K
arXiv year
1989
Papers
15
Tc exp.
1.1 K
Tc theo.
0.9 K
Evidence
experimental
Tc max measured at single_crystal, STM, DOI: 10.1103/PhysRevB.110.174516
Evidence (15 records from 15 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 1.1 | — | single_crystal | STM | — | 2024 | T1 | DOI: 10.1103/PhysRevB.110.174516 |
| 0.9 | ambient | — | — | — | 2021 | — | 2104.10143 |
| 0.2 | ambient | — | — | — | 2021 | T1 | DOI: 10.1103/PhysRevB.104.075117 |
| — | — | thin_film | resistivity | unknown | 2025 | T1 | 2509.05598 |
| — | — | — | STM | s-wave | 2024 | T3 | 2409.05758 |
| — | — | — | STM | — | 2022 | — | 2205.02806 |
| — | — | — | specific_heat | — | 2017 | T1 | 1703.09850 |
| — | — | single_crystal | — | — | 2012 | T1 | 1204.5976 |
| — | — | single_crystal | — | — | 2012 | T1 | 1210.1325 |
| — | — | single_crystal | ultrasonic | — | 2012 | T2 | 1208.0723 |
| — | — | single_crystal | resistivity | — | 2011 | T1 | DOI: 10.1103/PhysRevB.84.214504 |
| — | — | single_crystal | — | — | 2011 | T1 | 1111.4326 |
| — | — | thin_film | resistivity | — | 2010 | T1 | DOI: 10.1103/PhysRevB.82.214511 |
| — | — | thin_film | resistivity | — | 1989 | T1 | DOI: 10.1103/PhysRevB.40.182 |
| — | — | thin_film | resistivity | — | 1989 | T1 | DOI: 10.1103/PhysRevB.40.719 |
Structure
- Crystal structure
- orthorhombic
- Space group
- Cmca (64)
Superconducting parameters
- Hc2
- 22.0 T (400 mK, in-plane)
- λ_eph (e–ph coupling)
- 0.40
- ω_log
- 142 K
Samples & pressure
- Substrate
- 6H-SiC(0001)
- Pressure type
- none
- Doping type
- none