Tc max
1.1 K
Tc ambient
1.1 K
arXiv year
1989
Papers
15
Tc exp.
1.1 K
Tc theo.
0.9 K
Evidence
experimental
Tc max measured at single_crystal, STM, DOI: 10.1103/PhysRevB.110.174516
Evidence (15 records from 15 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 1.1 | — | single_crystal | STM | — | 2024 | T1 | DOI: 10.1103/PhysRevB.110.174516 |
| 0.9 | ambient | — | — | — | 2021 | — | 2104.10143 |
| 0.2 | ambient | — | — |
Structure
- Crystal structure
- orthorhombic
- Space group
- Cmca (64)
Superconducting parameters
- Hc2
- 22.0 T (400 mK, in-plane)
- λ_eph (e–ph coupling)
- 0.40
- ω_log
- 142 K
Samples & pressure
- Substrate
- 6H-SiC(0001)
- Pressure type
- none
- Doping type
- none