Tc max
98.0 K
Tc ambient
97.0 K
arXiv year
1993
Papers
124
Tc exp.
98.0 K
Tc theo.
111.0 K
Evidence
experimental
Tc max measured at single_crystal, ARPES, DOI: 10.1103/PhysRevB.102.205109, confirmed by 5 papers
Doping variants (7)
| Formula | Tc max (K) | Tc amb. (K) | Papers | Doping |
|---|---|---|---|---|
| HgBa2CuO4.096 | 100.5 | — | 2 | — |
| HgBa2CuO6+δ | 76.0 | — | 1 | 0.100 |
| HgBa2CuO4+0.10 | 60.0 | 60.0 | 1 | 0.075 |
| HgBa2CuO |
Evidence (213 records from 124 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 143.0 | — | single_crystal | — | s+id | 2000 | T3 | cond-mat/0011472 |
| 118.0 | 24.0 | polycrystal | resistivity | — | 1994 | T1 | DOI: 10.1103/PhysRevB.50.4260 |
| 111.0 |
Structure
- Crystal structure
- tetragonal
- Space group
- P4/mmm
- Lattice a (Å)
- 3.876
- Lattice c (Å)
- 9.515
Superconducting parameters
- Pairing symmetry
- d-wave
- Gap structure
- nodal
- Hc2
- 34.0 T (0 K, H parallel c)
- λ_eph (e–ph coupling)
- 0.71
Competing orders
- Competing order
- CDW
- T_AFM
- 305.0 K
- ρ(T) exponent
- 2.00
Samples & pressure
- Sample form
- single_crystal
- Pressure type
- none
- Doping type
- hole
- Doping level
- 0.110