Tc max
3.3 K
Tc ambient
3.3 K
arXiv year
1992
Papers
13
Tc exp.
3.3 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, DOI: 10.1103/PhysRevB.46.10917
Evidence (16 records from 13 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 3.3 | — | thin_film | resistivity | — | 1992 | T1 | DOI: 10.1103/PhysRevB.46.10917 |
| 1.5 | — | thin_film | resistivity | — | 2004 | T1 | cond-mat/0410724 |
| 1.5 |
Superconducting parameters
- Hc2
- 7.2 T (at SIT)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- oxidized silicon