Tc max
2.5 K
Tc ambient
—
arXiv year
2001
Papers
23
Tc exp.
2.5 K
Tc theo.
20.0 K
Evidence
experimental
Tc max measured at resistivity, arXiv:0903.0321, confirmed by 3 papers
Evidence (24 records from 23 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 20.0 | — | — | — | p-wave | 2020 | T1 | DOI: 10.1103/PhysRevResearch.2.043155 |
| 5.0 | — | thin_film | resistivity | — | 2001 | T1 | cond-mat/0107165 |
| 2.5 |
Structure
- Crystal structure
- wurtzite
Superconducting parameters
- Gap structure
- full_gap
- Hc2
- 0.7 T (20 mK, H along nanowire axis)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- SiO2/Si
- Pressure type
- none
- Doping type
- electron