Tc max
2.5 K
Tc ambient
—
arXiv year
2001
Papers
23
Tc exp.
2.5 K
Tc theo.
20.0 K
Evidence
experimental
Tc max measured at resistivity, arXiv:0903.0321, confirmed by 3 papers
Evidence (24 records from 23 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 20.0 | — | — | — | p-wave | 2020 | T1 | DOI: 10.1103/PhysRevResearch.2.043155 |
| 5.0 | — | thin_film | resistivity | — | 2001 | T1 | cond-mat/0107165 |
| 2.5 | — | — | resistivity | — | 2010 | T3 | 1010.2545 |
| 2.5 | — | — | resistivity | — | 2009 | T1 | 0903.0321 |
| 1.6 | — | thin_film | susceptibility | p_pm | 2021 | T1 | 2107.03695 |
| 1.2 | — | — | resistivity | — | 2018 | T3 | 1812.06017 |
| 0.1 | — | thin_film | — | — | 2002 | T1 | DOI: 10.1103/PhysRevB.66.132508 |
| 0.0 | — | thin_film | — | — | 2002 | T1 | DOI: 10.1103/PhysRevB.66.132508 |
| — | — | wire | resistivity | — | 2024 | T1 | DOI: 10.1103/PhysRevB.109.134506 |
| — | — | thin_film | resistivity | — | 2023 | T1 | DOI: 10.1103/PhysRevResearch.5.033131 |
| — | — | thin_film | resistivity | — | 2022 | T3 | 2205.09419 |
| — | — | — | resistivity | — | 2021 | T3 | 2108.05878 |
| — | — | thin_film | resistivity | s-wave | 2021 | T1 | 2108.08899 |
| — | — | — | resistivity | — | 2021 | T1 | 2111.13983 |
| — | — | thin_film | resistivity | p-wave | 2020 | — | 1712.08459 |
| — | — | wire | resistivity | — | 2019 | T3 | 1909.07651 |
| — | — | — | resistivity | — | 2019 | T3 | 1905.05505 |
| — | — | single_crystal | — | — | 2018 | T1 | DOI: 10.1103/PhysRevB.97.060508 |
| — | — | thin_film | — | — | 2018 | T1 | DOI: 10.1103/PhysRevLett.121.256803 |
| — | — | thin_film | resistivity | — | 2017 | T1 | 1709.05251 |
| — | — | — | resistivity | — | 2017 | T1 | 1706.09150 |
| — | — | thin_film | resistivity | — | 2016 | T1 | 1605.01865 |
| — | — | thin_film | resistivity | — | 2014 | — | 1411.6255 |
| — | — | single_crystal | — | — | 2010 | T1 | DOI: 10.1103/PhysRevB.82.054512 |
Structure
- Crystal structure
- wurtzite
Superconducting parameters
- Gap structure
- full_gap
- Hc2
- 0.7 T (20 mK, H along nanowire axis)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- SiO2/Si
- Pressure type
- none
- Doping type
- electron