Tc max
3.4 K
Tc ambient
3.4 K
Discovery
1996
Papers
5
Tc max measured at ambient, amorphous alloy, resistivity, arXiv:cond-mat/9611187, confirmed by 3 papers
Evidence (7 records from 5 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Paper |
|---|---|---|---|---|---|---|
| 3.4 | ambient | amorphous alloy | resistivity | — | 1996 | cond-mat/9611187 |
| 3.4 | ambient | thin_film | resistivity | — | 2004 | cond-mat/0406227 |
| 2.9 | ambient | thin_film | resistivity | — | 2004 | cond-mat/0406227 |
| 2.7 | ambient | thin_film | resistivity | — | 2004 | cond-mat/0406227 |
| 1.0 | ambient | thin_film | resistivity | — | 2004 | cond-mat/0406232 |
| — | ambient | thin_film | — | — | 1997 | cond-mat/9703100 |
| — | ambient | polycrystal | — | — | 1997 | cond-mat/9706032 |
Structure
- Crystal structure
- amorphous
Superconducting parameters
- Hc2
- 13.0 T (0 K, extrapolated from near T_c0 using WHH theory)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- silicon nitride substrate