Tc max
3.8 K
Tc ambient
2.8 K
arXiv year
1989
Papers
40
Tc exp.
3.8 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, DOI: 10.1103/PhysRevB.44.7555, confirmed by 2 papers
Evidence (65 records from 40 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 3.8 | — | thin_film | resistivity | — | 1989 | T1 | DOI: 10.1103/PhysRevB.39.4140 |
| 3.8 | — | thin_film | resistivity | — | 1991 | T1 | DOI: 10.1103/PhysRevB.44.7555 |
| 3.6 |
Structure
- Crystal structure
- amorphous
Superconducting parameters
- Hc2
- 13.0 T (0 K)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- Si
- Pressure type
- none
- Doping type
- none