Tc max
3.5 K
Tc ambient
3.5 K
arXiv year
2012
Papers
9
Tc exp.
3.5 K
Tc theo.
9.0 K
Evidence
mixed
Tc max measured at thin_film, resistivity, arXiv:2110.03867
Evidence (11 records from 9 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 9.0 | — | — | — | — | 2022 | T1 | 2203.03082 |
| 4.5 | — | — | — | — | 2023 | T1 | DOI: 10.1103/PhysRevB.108.085408 |
| 3.7 | — |
Structure
- Crystal structure
- trigonal
- Space group
- P3-m1
- Lattice a (Å)
- 3.940
- Lattice c (Å)
- 5.406
Superconducting parameters
- Hc2
- 1.5 T (0.35 K, H parallel ab-plane)
- λ_eph (e–ph coupling)
- 0.76
- ω_log
- 105 K
Competing orders
- T_CDW
- 262.0 K
- ρ(T) exponent
- 2.00
Samples & pressure
- Substrate
- Si/SiO2