Tc max
20.0 K
Tc ambient
20.0 K
arXiv year
1991
Papers
39
Tc exp.
22.0 K
Tc theo.
19.0 K
Evidence
experimental
Tc max measured at STM, arXiv:1911.08768, confirmed by 2 papers
Evidence (47 records from 39 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 22.0 | — | thin_film | STM | s-wave | 2020 | T1 | DOI: 10.1103/PhysRevLett.124.187001 |
| 22.0 | — | — | STM | s-wave | 2019 | T1 | 1911.08768 |
| 20.6 | — | thin_film | susceptibility | s-wave | 2023 | T1 | DOI: 10.1103/PhysRevLett.130.216004 |
| 20.0 | ambient | powder | resistivity | — | 2021 | T2 | 2109.08679 |
| 20.0 | ambient | polycrystal | susceptibility | — | 1996 | T1 | DOI: 10.1103/PhysRevB.54.R6865 |
| 19.8 | — | polycrystal | resistivity | s-wave | 2023 | T1 | DOI: 10.1103/PhysRevX.13.021008 |
| 19.8 | — | polycrystal | resistivity | s-wave | 1994 | T1 | DOI: 10.1103/PhysRevB.49.7012 |
| 19.6 | — | single_crystal | susceptibility | — | 1997 | T1 | DOI: 10.1103/PhysRevB.56.14128 |
| 19.5 | — | powder | susceptibility | — | 1998 | T1 | DOI: 10.1103/PhysRevB.58.11603 |
| 19.4 | — | powder | susceptibility | — | 1992 | T1 | DOI: 10.1103/PhysRevLett.68.1912 |
| 19.3 | — | single_crystal | susceptibility | — | 1995 | T1 | DOI: 10.1103/PhysRevB.52.15517 |
| 19.3 | — | — | — | — | 1993 | T1 | DOI: 10.1103/PhysRevB.47.8249 |
| 19.3 | — | powder | susceptibility | — | 1991 | T1 | DOI: 10.1103/PhysRevLett.67.271 |
| 19.2 | — | single_crystal | susceptibility | — | 1997 | T1 | DOI: 10.1103/PhysRevB.56.14128 |
| 19.0 | — | polycrystal | susceptibility | — | 2022 | T1 | 2208.03628 |
| 19.0 | — | single_crystal | susceptibility | s-wave | 2000 | T1 | DOI: 10.1103/PhysRevB.61.7118 |
| 19.0 | — | thin_film | resistivity, ARPES | s-wave | 2000 | T1 | DOI: 10.1103/PhysRevLett.85.1970 |
| 19.0 | — | powder | susceptibility | — | 1998 | T1 | DOI: 10.1103/PhysRevB.58.12433 |
| 19.0 | — | powder | susceptibility | — | 1998 | T1 | DOI: 10.1103/PhysRevB.58.11603 |
| 19.0 | ambient | polycrystal | specific_heat | — | 1996 | T1 | DOI: 10.1103/PhysRevB.54.R6865 |
| 19.0 | — | polycrystal | susceptibility | s-wave | 1994 | T1 | DOI: 10.1103/PhysRevB.49.7012 |
| 19.0 | — | powder | susceptibility | — | 1994 | T1 | DOI: 10.1103/PhysRevB.49.4285 |
| 19.0 | — | polycrystal | — | — | 1993 | T1 | DOI: 10.1103/PhysRevB.48.13959 |
| 19.0 | — | polycrystal | susceptibility, resistivity | — | 1992 | T1 | DOI: 10.1103/PhysRevLett.69.2987 |
| 18.5 | — | polycrystal | resistivity | unknown | 2022 | T1 | 2208.03628 |
| 18.4 | — | thin_film | STM | s-wave | 2020 | T1 | DOI: 10.1103/PhysRevLett.124.187001 |
| 18.0 | — | thin_film | resistivity | — | 2000 | T1 | DOI: 10.1103/PhysRevB.62.1366 |
| 18.0 | — | powder | susceptibility | — | 1992 | T1 | DOI: 10.1103/PhysRevB.46.5880 |
| 14.0 | — | powder | muSR | — | 1992 | T1 | DOI: 10.1103/PhysRevLett.68.1912 |
| 10.0 | — | thin_film | resistivity | — | 1993 | T1 | DOI: 10.1103/PhysRevB.47.15354 |
| 7.5 | ambient | — | — | — | 2013 | T1 | DOI: 10.1103/PhysRevB.88.054510 |
| 7.5 | ambient | — | — | — | 2013 | T1 | 1303.5138 |
| 6.0 | — | thin_film | resistivity | — | 1993 | T1 | DOI: 10.1103/PhysRevB.47.15354 |
| 1.0 | — | — | — | — | 2026 | T3 | 2603.18182 |
| — | — | — | STM | — | 2024 | T1 | 2403.14970 |
| — | — | thin_film | resistivity | — | 2023 | — | 2312.06421 |
| — | — | thin_film | resistivity | — | 2023 | T1 | 2301.06425 |
| — | — | thin_film | ARPES | s-wave | 2023 | T1 | 2304.13914 |
| — | — | — | — | — | 2023 | T3 | 2303.16888 |
| — | — | polycrystal | resistivity | — | 2021 | T1 | DOI: 10.1103/PhysRevX.11.011055 |
| — | — | — | resistivity | — | 2020 | T1 | 2002.12835 |
| — | — | — | — | s-wave | 2015 | — | 1505.05849 |
| — | — | thin_film | resistivity | — | 2002 | T1 | cond-mat/0206221 |
| — | — | single_crystal | susceptibility | — | 1998 | T1 | DOI: 10.1103/PhysRevLett.81.3749 |
| — | — | powder | muSR | — | 1998 | T1 | DOI: 10.1103/PhysRevB.58.1004 |
| — | — | thin_film | resistivity | — | 1997 | T1 | DOI: 10.1103/PhysRevB.55.3866 |
| — | — | single_crystal | susceptibility | — | 1996 | T1 | DOI: 10.1103/PhysRevB.54.R9651 |
Structure
- Crystal structure
- face-centered-cubic
- Space group
- Fm3m
- Lattice a (Å)
- 14.208
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- full_gap
- Hc2
- 49.0 T (0 K)
- λ_eph (e–ph coupling)
- 1.20
- ω_log
- 1071 K
Samples & pressure
- Substrate
- silicon nitride
- Doping type
- none