Tc max
44.0 K
Tc ambient
32.9 K
arXiv year
2011
Papers
43
Tc exp.
44.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at arXiv:1609.03151, confirmed by 3 papers
Evidence (54 records from 43 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 44.0 | — | — | — | — | 2017 | — | 1609.03151 |
| 44.0 | — | single_crystal | resistivity | — | 2015 | T1 | 1504.04197 |
| 44.0 | — | single_crystal | resistivity | — | 2011 | T1 | 1101.0789 |
| 33.0 | — | single_crystal | resistivity | — | 2015 | T1 | 1504.04197 |
| 33.0 | ambient | single_crystal | susceptibility | s_pm | 2011 | T1 | 1101.4967 |
| 33.0 | — | single_crystal | susceptibility | — | 2011 | T1 | DOI: 10.1103/PhysRevB.83.104508 |
| 33.0 | ambient | — | susceptibility | — | 2011 | T1 | 1111.2552 |
| 32.9 | — | single_crystal | resistivity, susceptibility | — | 2012 | T1 | 1209.2002 |
| 32.3 | — | single_crystal | resistivity | — | 2011 | T1 | 1110.5316 |
| 32.3 | — | single_crystal | resistivity | — | 2011 | T1 | 1110.5316 |
| 32.1 | — | single_crystal | resistivity | — | 2025 | T1 | DOI: 10.1103/7zn4-dwvg |
| 32.0 | — | single_crystal | resistivity, susceptibility | — | 2020 | T1 | DOI: 10.1103/PhysRevB.101.020508 |
| 32.0 | — | single_crystal | resistivity | — | 2017 | T1 | DOI: 10.1103/PhysRevB.96.094503 |
| 32.0 | — | single_crystal | resistivity | — | 2015 | — | 1501.06745 |
| 32.0 | — | single_crystal | resistivity, susceptibility | — | 2015 | T1 | 1501.01558 |
| 32.0 | — | single_crystal | susceptibility | — | 2015 | T1 | 1504.04197 |
| 32.0 | — | single_crystal | resistivity, susceptibility | — | 2015 | T1 | DOI: 10.1103/PhysRevB.91.020503 |
| 32.0 | — | single_crystal | resistivity | — | 2014 | T1 | 1407.5545 |
| 32.0 | — | single_crystal | resistivity | — | 2014 | T1 | DOI: 10.1103/PhysRevB.89.134515 |
| 32.0 | — | single_crystal | resistivity | — | 2014 | T1 | DOI: 10.1103/PhysRevB.89.224515 |
| 32.0 | — | single_crystal | resistivity | — | 2014 | T1 | DOI: 10.1103/PhysRevB.90.174509 |
| 32.0 | — | single_crystal | resistivity, susceptibility | — | 2014 | T1 | DOI: 10.1103/PhysRevB.90.214516 |
| 32.0 | — | — | resistivity | — | 2014 | T1 | 1407.1455 |
| 32.0 | — | single_crystal | resistivity, susceptibility | — | 2013 | T1 | 1301.2668 |
| 32.0 | — | single_crystal | ARPES | — | 2013 | T1 | DOI: 10.1103/PhysRevLett.110.067003 |
| 32.0 | — | — | ARPES | — | 2012 | — | 1208.5192 |
| 32.0 | — | single_crystal | specific_heat, susceptibility | unknown | 2011 | T1 | DOI: 10.1103/PhysRevB.83.144511 |
| 32.0 | — | single_crystal | resistivity | — | 2011 | T1 | DOI: 10.1103/PhysRevB.83.174503 |
| 32.0 | — | single_crystal | resistivity | — | 2011 | — | 1102.2217 |
| 32.0 | — | single_crystal | specific_heat | s-wave | 2011 | T1 | 1101.5117 |
| 31.8 | — | single_crystal | thermoelectric_power | — | 2011 | — | 1102.2217 |
| 31.7 | — | single_crystal | resistivity | — | 2011 | T1 | DOI: 10.1103/PhysRevX.1.021020 |
| 31.3 | — | single_crystal | resistivity | — | 2011 | T1 | DOI: 10.1103/PhysRevB.84.174501 |
| 31.3 | — | single_crystal | resistivity | — | 2025 | T1 | DOI: 10.1103/7zn4-dwvg |
| 31.2 | — | single_crystal | resistivity | — | 2011 | T1 | DOI: 10.1103/PhysRevX.1.021020 |
| 31.0 | — | single_crystal | susceptibility | — | 2025 | T1 | DOI: 10.1103/7zn4-dwvg |
| 31.0 | — | single_crystal | susceptibility, neutron | — | 2017 | T1 | DOI: 10.1103/PhysRevB.96.094503 |
| 31.0 | — | single_crystal | ARPES | s-wave | 2012 | — | 1205.0787 |
| 31.0 | — | single_crystal | ARPES | s-wave | 2012 | T1 | DOI: 10.1103/PhysRevB.85.220504 |
| 31.0 | — | — | resistivity | — | 2011 | T1 | 1106.3026 |
| 31.0 | — | single_crystal | susceptibility | — | 2011 | — | 1109.0534 |
| 31.0 | — | single_crystal | resistivity, susceptibility | — | 2011 | T1 | 1110.5316 |
| 30.4 | — | single_crystal | susceptibility | — | 2011 | T1 | DOI: 10.1103/PhysRevB.84.174501 |
| 29.0 | — | single_crystal | specific_heat | — | 2018 | T1 | DOI: 10.1103/PhysRevB.97.184502 |
| 27.0 | — | single_crystal | thermal_conductivity | — | 2011 | — | 1102.2217 |
| 25.0 | — | single_crystal | susceptibility | — | 2012 | T1 | DOI: 10.1103/PhysRevB.85.144516 |
| — | — | single_crystal | resistivity, susceptibility | — | 2017 | T1 | 1706.02182 |
| — | — | single_crystal | ARPES | — | 2014 | T1 | DOI: 10.1103/PhysRevX.4.031041 |
| — | — | thin_film | STM | — | 2013 | T1 | DOI: 10.1103/PhysRevB.88.140506 |
| — | — | — | — | — | 2013 | T3 | 1306.5817 |
| — | — | single_crystal | resistivity | — | 2012 | T1 | DOI: 10.1103/PhysRevLett.109.267003 |
| — | ambient | — | resistivity | — | 2011 | T1 | 1103.1347 |
| — | — | — | — | d-wave | 2011 | T1 | 1101.4390 |
| — | — | single_crystal | susceptibility | — | 2011 | T1 | 1104.2008 |
Structure
- Crystal structure
- I4/mmm
- Space group
- I4/mmm
- Lattice c (Å)
- 14.090
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- full_gap
- Hc2
- 100.0 T (0 K, H parallel c)
- λ_eph (e–ph coupling)
- —
Competing orders
- Competing order
- AFM
Samples & pressure
- Sample form
- single_crystal
- Substrate
- graphitized 6H-SiC(0001)
- Doping level
- 0.640