Tc max
3.3 K
Tc ambient
—
arXiv year
2015
Papers
1
Tc exp.
3.3 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, DOI: 10.1103/PhysRevB.91.104519
Evidence (3 records from 1 paper)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 3.3 | — | thin_film | resistivity | — | 2015 | T1 | DOI: 10.1103/PhysRevB.91.104519 |
| 3.2 | — | thin_film | resistivity | — | 2015 | T1 | DOI: 10.1103/PhysRevB.91.104519 |
| 2.9 |
Structure
- Crystal structure
- HfCuSi2 structure
- Space group
- P4/nmm (#129)
- Lattice a (Å)
- 4.520
- Lattice c (Å)
- 9.880
Superconducting parameters
- Hc2
- 1.1 T (perpendicular to the film surface)
- λ_eph (e–ph coupling)
- —
Competing orders
- ρ(T) exponent
- 2.00
Samples & pressure
- Substrate
- MgO