Tc max
3.2 K
Tc ambient
3.2 K
arXiv year
2019
Papers
1
Tc exp.
3.2 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, DOI: 10.1103/PhysRevB.100.165308
Evidence (1 record from 1 paper)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 3.2 | — | thin_film | resistivity | — | 2019 | T1 | DOI: 10.1103/PhysRevB.100.165308 |
Structure
- Crystal structure
- ThSi2
- Space group
- I41/amd
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- Si(111)
- Pressure type
- none