Tc max
4.8 K
Tc ambient
4.8 K
arXiv year
2019
Papers
2
Tc exp.
4.8 K
Tc theo.
—
Evidence
experimental
Tc max measured at ambient, thin_film, resistivity, arXiv:1905.04473, confirmed by 2 papers
Evidence (4 records from 2 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 4.8 | ambient | thin_film | resistivity | s-wave | 2019 | — | 1905.04473 |
| 4.8 | — | thin_film | resistivity | — | 2019 | T1 | DOI: 10.1103/PhysRevMaterials.3.054804 |
| 3.5 | — | thin_film |
Structure
- Crystal structure
- P3̅m1
- Space group
- P3̅m1
Superconducting parameters
- λ_eph (e–ph coupling)
- 0.97
Samples & pressure
- Sample form
- thin_film
- Substrate
- Li2Al2SiP2TiO13
- Doping type
- electron