Lu₅Ir₄Si₁₀

conventional · Sc5Co4Si10-type

ambient SCcompeting order

Tc max

9.1 K

Tc ambient

3.9 K

arXiv year

1986

Papers

Tc exp.

9.1 K

Tc theo.

—

Evidence

experimental

Tc max measured at P=2.1 GPa, polycrystal, resistivity, DOI: 10.1103/PhysRevB.34.4590, confirmed by 2 papers

Evidence (18 records from 10 papers)

the flat columns above are aggregates — each line here is one paper's claim

Tc (K)	P (GPa)	Sample	Method	Pairing	Year	Tier	Paper
9.1	2.0	polycrystal	resistivity	—	1986	T1	DOI: 10.1103/PhysRevB.33.5062
9.1	2.1	polycrystal	resistivity	—	1986	T1	DOI: 10.1103/PhysRevB.34.4590
5.7	—	single_crystal	resistivity	s-wave	2013	T1	1301.2657
5.3	—	single_crystal	resistivity	s-wave	2020	T1	2006.03577
4.6	—	single_crystal	resistivity	s-wave	2013	T1	1301.2657
4.2	—	single_crystal	resistivity	s-wave	2020	T1	2006.03577
4.2	—	single_crystal	resistivity	s-wave	2020	T1	DOI: 10.1103/PhysRevB.102.094519
4.0	—	single_crystal	resistivity	s-wave	2013	T1	1301.2657
3.9	—	single_crystal	susceptibility	s-wave	2013	T1	1301.2657
3.9	ambient	single_crystal	resistivity	—	2003	T1	DOI: 10.1103/PhysRevB.68.132102
3.9	—	—	specific_heat	s-wave	2003	T2	cond-mat/0304328
3.8	ambient	polycrystal	resistivity	—	1986	T1	DOI: 10.1103/PhysRevB.34.4590
3.8	ambient	polycrystal	specific_heat	—	1987	T1	DOI: 10.1103/PhysRevB.35.6659
3.8	—	single_crystal	specific_heat	s-wave	2013	T1	1301.2657
3.7	—	single_crystal	susceptibility	s-wave	2013	T1	1301.2657
3.7	ambient	polycrystal	resistivity	—	1991	T1	DOI: 10.1103/PhysRevB.43.7681
3.7	ambient	polycrystal	resistivity	—	1986	T1	DOI: 10.1103/PhysRevB.33.5062
—	—	polycrystal	resistivity	—	1987	T1	DOI: 10.1103/PhysRevB.35.4673