LuNi₂B₂C

borocarbide · tetragonal

ambient SCdisputed

Tc max

16.5 K

Tc ambient

16.5 K

arXiv year

1994

Papers

Tc exp.

16.9 K

Tc theo.

16.0 K

Evidence

experimental

Tc max measured at single_crystal, resistivity, DOI: 10.1103/PhysRevB.71.014512, confirmed by 3 papers

Evidence (84 records from 65 papers)

the flat columns above are aggregates — each line here is one paper's claim

Tc (K)	P (GPa)	Sample	Method	Pairing	Year	Tier	Paper
17.6	—	polycrystal	resistivity	—	1994	T1	DOI: 10.1103/PhysRevB.50.351
16.9	—	single_crystal	resistivity	—	2005	T1	DOI: 10.1103/PhysRevB.71.014512
16.9	—	single_crystal	resistivity	unknown	2004	T1	cond-mat/0412325
16.8	—	single_crystal	resistivity	—	2006	—	cond-mat/0609771
16.8	—	single_crystal	resistivity	—	2005	T2	cond-mat/0511373
16.7	—	polycrystal	resistivity	—	1999	T2	cond-mat/9902299
16.7	ambient	polycrystal	resistivity	—	1998	T2	cond-mat/9811273
16.7	—	polycrystal	resistivity	—	1994	T1	DOI: 10.1103/PhysRevB.50.351
16.6	—	single_crystal	neutron	—	2009	T1	DOI: 10.1103/PhysRevB.79.174522
16.6	—	single_crystal	ARPES	—	2008	T1	DOI: 10.1103/PhysRevB.77.134520
16.6	—	single_crystal	resistivity, susceptibility	—	2001	T1	DOI: 10.1103/PhysRevB.64.180506
16.6	—	single_crystal	—	—	2001	T1	DOI: 10.1103/PhysRevLett.86.320
16.6	—	single_crystal	neutron	—	2001	T1	DOI: 10.1103/PhysRevLett.86.5148
16.6	—	single_crystal	neutron	—	2001	T1	cond-mat/0104052
16.6	—	single_crystal	resistivity	—	1997	T1	DOI: 10.1103/PhysRevB.55.8506
16.6	—	polycrystal	neutron	—	1997	T1	DOI: 10.1103/PhysRevB.55.9058
16.6	—	polycrystal	susceptibility	—	1997	T1	DOI: 10.1103/PhysRevB.55.8497
16.6	—	polycrystal	susceptibility	—	1996	T1	DOI: 10.1103/PhysRevB.53.5640
16.6	—	single_crystal	neutron	—	1995	T1	DOI: 10.1103/PhysRevB.52.R9839
16.5	—	polycrystal	resistivity	—	2005	T1	DOI: 10.1103/PhysRevB.71.024509
16.5	—	single_crystal	STM	s-wave	2003	T1	DOI: 10.1103/PhysRevB.67.014526
16.5	ambient	polycrystal	resistivity	—	2000	T1	DOI: 10.1103/PhysRevB.61.R6487
16.5	—	single_crystal	susceptibility, resistivity	—	1998	T1	DOI: 10.1103/PhysRevLett.80.1730
16.5	—	single_crystal	neutron	—	1997	T1	DOI: 10.1103/PhysRevB.55.R8678
16.5	—	single_crystal	susceptibility	—	1997	T1	cond-mat/9712174
16.5	—	polycrystal	specific_heat	—	1994	T1	DOI: 10.1103/PhysRevB.50.4216
16.4	—	polycrystal	susceptibility	—	2005	T1	DOI: 10.1103/PhysRevB.71.024509
16.2	—	single_crystal	susceptibility	—	2007	T1	DOI: 10.1103/PhysRevB.76.094520
16.2	—	single_crystal	susceptibility, resistivity	—	2007	T1	cond-mat/0702509
16.1	—	single_crystal	resistivity	—	2011	T1	DOI: 10.1103/PhysRevB.83.104519
16.1	—	single_crystal	susceptibility	—	2008	T1	0811.2604
16.1	—	single_crystal	resistivity	unknown	2004	T1	DOI: 10.1103/PhysRevLett.92.237002
16.1	—	single_crystal	resistivity	unknown	2003	T1	cond-mat/0310663
16.0	—	polycrystal	resistivity, specific_heat	—	1999	T2	cond-mat/9911305
16.0	—	single_crystal	resistivity	—	2011	T1	DOI: 10.1103/PhysRevB.83.104519
16.0	ambient	single_crystal	resistivity	—	2010	T1	DOI: 10.1103/PhysRevB.82.174513
16.0	—	single_crystal	muSR	—	2002	T1	DOI: 10.1103/PhysRevB.65.214520
16.0	—	—	—	s-wave	2001	T2	cond-mat/0101419
16.0	—	single_crystal	resistivity	—	2001	T1	DOI: 10.1103/PhysRevLett.87.237001
16.0	—	single_crystal	resistivity	unknown	2001	T2	cond-mat/0108409
16.0	—	single_crystal	resistivity	s-wave	2000	T1	cond-mat/0012436
15.9	—	—	—	—	2015	T1	DOI: 10.1103/PhysRevB.92.054510
15.9	—	thin_film	resistivity	—	2010	T1	1007.1406
15.9	—	single_crystal	resistivity	unknown	2004	T1	DOI: 10.1103/PhysRevLett.92.237002
15.9	—	single_crystal	resistivity	unknown	2003	T1	cond-mat/0310663
15.8	—	thin_film	resistivity	—	2010	—	1002.3584
15.7	—	single_crystal	susceptibility	—	2003	T1	cond-mat/0310188
15.7	—	single_crystal	resistivity	—	2000	T1	DOI: 10.1103/PhysRevB.62.1291
15.7	—	single_crystal	—	s-wave	1999	T1	cond-mat/9910087
15.5	—	single_crystal	resistivity	unknown	2004	T1	DOI: 10.1103/PhysRevLett.92.237002
15.5	—	single_crystal	resistivity	unknown	2003	T1	cond-mat/0310663
15.2	—	polycrystal	susceptibility	—	1996	T1	DOI: 10.1103/PhysRevB.53.5640
15.0	—	single_crystal	resistivity	—	2011	T1	DOI: 10.1103/PhysRevB.83.104519
15.0	—	thin_film	resistivity	s-wave	2001	T1	DOI: 10.1103/PhysRevB.64.100505
14.7	—	polycrystal	resistivity	—	1999	T2	cond-mat/9902299
14.7	ambient	polycrystal	resistivity	—	1998	T2	cond-mat/9811273
14.5	—	single_crystal	resistivity	—	2006	—	cond-mat/0609771
14.5	—	single_crystal	resistivity	—	2005	T2	cond-mat/0511373
14.2	—	thin_film	susceptibility	s-wave	2001	T1	DOI: 10.1103/PhysRevB.64.100505
10.6	—	powder	susceptibility	—	2001	T2	cond-mat/0106577
10.0	—	single_crystal	resistivity	—	2006	—	cond-mat/0609771
10.0	—	single_crystal	resistivity	—	2005	T2	cond-mat/0511373
8.7	—	powder	susceptibility	—	2001	T2	cond-mat/0106577
—	—	—	—	—	2024	T1	DOI: 10.1103/PhysRevB.109.L180505
—	—	—	—	—	2023	T1	2310.03723
—	—	—	susceptibility	—	2017	T1	1709.02769
—	—	single_crystal	muSR, susceptibility	—	2011	T1	DOI: 10.1103/PhysRevB.83.104505
—	—	single_crystal	specific_heat	s-wave	2011	T1	1110.0092
—	—	single_crystal	—	s-wave	2010	T1	1004.3846
—	—	single_crystal	susceptibility	—	2010	T1	DOI: 10.1103/PhysRevB.82.180513
—	—	single_crystal	resistivity	s-wave	2008	—	0812.4715
—	—	single_crystal	ARPES	—	2008	T1	0803.0310
—	—	—	susceptibility	—	2006	T2	cond-mat/0606562
—	—	single_crystal	—	—	2006	T2	cond-mat/0601116
—	—	single_crystal	specific_heat	unknown	2004	T2	cond-mat/0411001
—	—	single_crystal	susceptibility	—	2002	T2	cond-mat/0207502
—	—	single_crystal	STM	s-wave	2002	T2	cond-mat/0209469
—	—	single_crystal	susceptibility	—	2002	T3	cond-mat/0202134
—	—	thin_film	resistivity	s-wave	2001	T2	cond-mat/0103111
—	—	polycrystal	specific_heat	—	2001	T2	cond-mat/0104521
—	—	single_crystal	resistivity	—	2001	T2	cond-mat/0106577
—	—	single_crystal	—	—	2001	T2	cond-mat/0104085
—	—	single_crystal	—	—	1999	T2	cond-mat/9912492
—	—	single_crystal	resistivity	—	1997	T1	cond-mat/9712174

Structure

Crystal structure: tetragonal
Space group: I4/mmm
Lattice a (Å): 3.464
Lattice c (Å): 10.631

Superconducting parameters

Pairing symmetry: s-wave
Hc2: 9.8 T (0 K, H parallel c)
λ_eph (e–ph coupling): 1.22
ω_log: 345 K

Competing orders

ρ(T) exponent: 2.00

Samples & pressure

Sample form: single_crystal
Substrate: sapphire
Pressure type: none
Doping type: none
Doping level: 0.000