Tc max
39.0 K
Tc ambient
39.0 K
Discovery
2001
Papers
6
Tc max measured at ambient, thin_film, resistivity, arXiv:cond-mat/0110006, confirmed by 3 papers
Evidence (9 records from 6 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Paper |
|---|---|---|---|---|---|---|
| 39.0 | ambient | — | specific_heat | s-wave | 2004 | cond-mat/0412522 |
| 39.0 | ambient | thin_film | resistivity | s-wave | 2001 | cond-mat/0110006 |
| 39.0 | ambient | thin_film | resistivity | — | 2001 | cond-mat/0112452 |
| 38.5 | ambient | polycrystal | resistivity, susceptibility | — | 2002 | cond-mat/0212022 |
| 38.0 | ambient | thin_film | susceptibility | s-wave | 2002 | cond-mat/0201550 |
| 36.5 | ambient | polycrystal | muSR | unknown | 2002 | cond-mat/0212022 |
| — | ambient | — | STM | — | 2004 | cond-mat/0412522 |
| — | ambient | thin_film | STM | s-wave | 2001 | cond-mat/0110006 |
| — | ambient | — | specific_heat | s-wave | 2001 | cond-mat/0112100 |
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- multi_gap
- Hc2
- 17.0 T (0 K, H parallel ab)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Substrate
- Al_2O_3
- Pressure type
- none
- Doping type
- none