Tc max
39.0 K
Tc ambient
39.0 K
arXiv year
2001
Papers
787
Tc exp.
40.7 K
Tc theo.
45.1 K
Evidence
experimental
Tc max measured at ambient, thin_film, resistivity, arXiv:cond-mat/0703637, confirmed by 10 papers
Evidence (1009 records from 787 papers)
the flat columns above are aggregates — each line here is one paper's claimStructure
- Crystal structure
- AlB2-type structure
- Space group
- P6/mmm
- Lattice c (Å)
- 3.517
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- multi_gap
- Hc2
- 65.4 T (T=6.6 K, H parallel c)
- λ_eph (e–ph coupling)
- 0.87
- ω_log
- 1508 K
Competing orders
- ρ(T) exponent
- 2.45
Samples & pressure
- Substrate
- 6H-SiC
- Pressure type
- none
- Doping type
- none
- Doping level
- 0.025