Tc max
4.1 K
Tc ambient
—
arXiv year
2026
Papers
1
Tc exp.
4.1 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:2605.27179
Evidence (1 record from 1 paper)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 4.1 | — | thin_film | resistivity | — | 2026 | — | 2605.27179 |
Structure
- Crystal structure
- amorphous
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- SiO2
- Doping type
- none