Tc max
8.0 K
Tc ambient
—
arXiv year
2011
Papers
1
Tc exp.
8.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:1112.6369
Evidence (1 record from 1 paper)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 8.0 | — | thin_film | resistivity | — | 2011 | T1 | 1112.6369 |
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- Silicon
- Pressure type
- none