Tc max
11.5 K
Tc ambient
9.9 K
arXiv year
2006
Papers
13
Tc exp.
11.5 K
Tc theo.
36.6 K
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:1312.6144, confirmed by 2 papers
Evidence (29 records from 13 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 36.6 | ambient | — | — | — | 2025 | — | 2503.10943 |
| 32.1 | ambient | — | — | — | 2025 | — | 2503.10943 |
| 29.0 | — | — | — | — | 2006 | T1 |
Structure
- Crystal structure
- cubic
- Space group
- 187
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- silicon
- Pressure type
- none
- Doping type
- none