Tc max
10.0 K
Tc ambient
10.0 K
arXiv year
1986
Papers
15
Tc exp.
9.6 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, arXiv:2211.02454, confirmed by 2 papers
Evidence (19 records from 15 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 10.0 | — | thin_film | — | — | 2022 | T3 | 2211.02454 |
| 9.6 | — | thin_film | resistivity | — | 2026 | T1 | DOI: 10.1103/hls3-jqzj |
| 9.0 | — |
Structure
- Crystal structure
- bcc
Superconducting parameters
- Hc2
- 6.0 T (B perpendicular to plane)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- silicon
- Pressure type
- none