Tc max
6.1 K
Tc ambient
6.1 K
arXiv year
2022
Papers
1
Tc exp.
6.1 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, DOI: 10.1103/PhysRevApplied.18.014006
Overlayer
mosi
Substrate
al
Evidence (1 record from 1 paper)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 6.1 | — | thin_film | resistivity | — | 2022 | T1 | DOI: 10.1103/PhysRevApplied.18.014006 |
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- Si (100)/SiO2 (250 nm)
- Pressure type
- none