Tc max
3.8 K
Tc ambient
3.8 K
arXiv year
2014
Papers
1
Tc exp.
3.8 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:1403.1246
Evidence (5 records from 1 paper)
the flat columns above are aggregates — each line here is one paper's claimSuperconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Substrate
- Si(100) with Si3N4 layer