Tc max
4.2 K
Tc ambient
—
arXiv year
1994
Papers
11
Tc exp.
4.2 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, DOI: 10.1103/PhysRevB.63.214510, confirmed by 2 papers
Overlayer
nb/alalox
Substrate
nb
Evidence (11 records from 11 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 4.2 | — | thin_film | resistivity | — | 2019 | T1 | DOI: 10.1103/PhysRevB.100.064501 |
| 4.2 | — | thin_film | resistivity | — | 2001 | T1 | DOI: 10.1103/PhysRevB.63.214510 |
| — |
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- silicon