Tc max
9.1 K
Tc ambient
7.0 K
arXiv year
1998
Papers
3
Tc exp.
9.1 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, DOI: 10.1103/PhysRevB.108.104502
Overlayer
pd
Substrate
nb
Evidence (7 records from 3 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 9.1 | — | thin_film | — | — | 2023 | T1 | DOI: 10.1103/PhysRevB.108.104502 |
| 8.8 | — | thin_film | — | — | 2023 | T1 | DOI: 10.1103/PhysRevB.108.104502 |
| 7.0 |
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- Si
- Pressure type
- none