Tc max
9.1 K
Tc ambient
7.0 K
arXiv year
1998
Papers
3
Tc exp.
9.1 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, DOI: 10.1103/PhysRevB.108.104502, confirmed by 3 papers
Overlayer
pd
Substrate
nb
Evidence (7 records from 3 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 9.1 | — | thin_film | — | — | 2023 | T1 | DOI: 10.1103/PhysRevB.108.104502 |
| 8.8 | — | thin_film | — | — | 2023 | T1 | DOI: 10.1103/PhysRevB.108.104502 |
| 7.0 | — | thin_film | resistivity | — | 1998 | T1 | DOI: 10.1103/PhysRevB.57.7922 |
| 4.8 | — | thin_film | resistivity | — | 1998 | T1 | DOI: 10.1103/PhysRevB.57.7922 |
| 4.0 | — | thin_film | resistivity | — | 1998 | T1 | DOI: 10.1103/PhysRevB.57.7922 |
| 3.6 | — | thin_film | resistivity | — | 1998 | T1 | DOI: 10.1103/PhysRevB.57.7922 |
| 3.6 | — | thin_film | resistivity | — | 2005 | T1 | DOI: 10.1103/PhysRevB.72.024535 |
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- Si
- Pressure type
- none