Tc max
8.8 K
Tc ambient
8.8 K
arXiv year
2011
Papers
9
Tc exp.
8.8 K
Tc theo.
—
Evidence
experimental
Tc max measured at polycrystal, DOI: 10.1103/PhysRevB.83.144525, confirmed by 2 papers
Evidence (13 records from 9 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 8.9 | — | polycrystal | resistivity, susceptibility, specific_heat | s-wave | 2013 | T1 | DOI: 10.1103/PhysRevB.88.144510 |
| 8.8 | — | polycrystal | — | — | 2011 | T1 | DOI: 10.1103/PhysRevB.83.144525 |
| 8.8 | — | polycrystal | resistivity | — | 2011 | T1 | DOI: 10.1103/PhysRevB.83.144525 |
| 8.7 | — | polycrystal | specific_heat | — | 2011 | T1 | DOI: 10.1103/PhysRevB.83.144525 |
| 8.6 | ambient | polycrystal | resistivity, specific_heat, susceptibility | p-wave | 2018 | T1 | 1807.04894 |
| 8.5 | — | single_crystal | resistivity, specific_heat | s-wave | 2015 | T1 | DOI: 10.1103/PhysRevB.91.134508 |
| 8.0 | — | polycrystal | susceptibility | — | 2011 | T1 | DOI: 10.1103/PhysRevB.83.144525 |
| 7.4 | — | thin_film | resistivity | — | 2016 | T1 | DOI: 10.1103/PhysRevB.94.104512 |
| 6.1 | — | thin_film | resistivity | — | 2023 | T1 | 2312.04331 |
| 5.3 | — | thin_film | resistivity | — | 2016 | T1 | DOI: 10.1103/PhysRevB.94.104512 |
| 2.9 | — | thin_film | resistivity | — | 2025 | T1 | DOI: 10.1103/q1nb-cvh6 |
| — | — | — | resistivity | unknown | 2025 | T1 | 2510.08110 |
| — | — | polycrystal | resistivity, susceptibility, specific_heat | s-wave | 2013 | T1 | 1310.8375 |
Structure
- Crystal structure
- alpha-Mn
- Space group
- I43m
- Lattice a (Å)
- 9.653
Superconducting parameters
- Pairing symmetry
- s-wave
- λ_eph (e–ph coupling)
- 0.73
Competing orders
- ρ(T) exponent
- 2.00
Samples & pressure
- Sample form
- polycrystal
- Substrate
- Si(100)