Tc max
2.9 K
Tc ambient
2.9 K
Discovery
2001
Papers
2
Tc max measured at ambient, thin_film, resistivity, arXiv:cond-mat/0111456, confirmed by 2 papers
Evidence (3 records from 2 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Paper |
|---|---|---|---|---|---|---|
| 2.9 | ambient | thin_film | resistivity | s-wave | 2001 | cond-mat/0111456 |
| 2.8 | ambient | thin_film | resistivity | — | 2004 | cond-mat/0404292 |
| 2.5 | ambient | thin_film | resistivity | s-wave | 2001 | cond-mat/0111456 |
Structure
- Crystal structure
- amorphous
Superconducting parameters
- Hc2
- 3.0 T (at 2.4 K)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- oxidised silicon wafers
- Pressure type
- none