Tc max
2.1 K
Tc ambient
2.1 K
arXiv year
1990
Papers
4
Tc exp.
2.1 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, DOI: 10.1103/PhysRevB.42.2647
Evidence (4 records from 4 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 2.1 | — | thin_film | resistivity | — | 1990 | T1 | DOI: 10.1103/PhysRevB.42.2647 |
| 1.0 | — | thin_film | resistivity | — | 2012 | T1 | DOI: 10.1103/PhysRevLett.108.097001 |
| — |
Structure
- Crystal structure
- amorphous
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- silicon