Tc max
4.4 K
Tc ambient
4.4 K
arXiv year
2011
Papers
21
Tc exp.
4.4 K
Tc theo.
4.0 K
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:1301.5355, confirmed by 2 papers
Evidence (42 records from 21 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 4.4 | ambient | thin_film | — | — | 2023 | T1 | 2306.12034 |
| 4.4 | — | thin_film | resistivity | — | 2013 | T1 | 1301.5355 |
| 4.3 | ambient | single_crystal | resistivity | — | 2023 | T1 | 2306.12034 |
| 4.3 | — | thin_film | resistivity | — | 2013 | T1 | 1301.5355 |
| 4.3 | — | single_crystal | resistivity | — | 2012 | T1 | 1207.3345 |
| 4.2 | — | single_crystal | resistivity | s-wave | 2023 | T1 | DOI: 10.1103/PhysRevB.107.174513 |
| 4.1 | — | single_crystal | resistivity | s-wave | 2023 | T1 | DOI: 10.1103/PhysRevB.107.174513 |
| 4.1 | ambient | single_crystal | resistivity, susceptibility | s-wave | 2018 | T1 | 1809.07789 |
| 4.1 | ambient | thin_film | resistivity | unknown | 2025 | T2 | 2509.14590 |
| 4.1 | — | single_crystal | resistivity | s-wave | 2023 | T1 | DOI: 10.1103/PhysRevB.107.174513 |
| 4.1 | — | single_crystal | resistivity | — | 2012 | T1 | 1207.3345 |
| 4.1 | — | single_crystal | resistivity, specific_heat | — | 2012 | T1 | DOI: 10.1103/PhysRevB.86.024527 |
| 4.0 | — | single_crystal | resistivity | s-wave | 2023 | T1 | DOI: 10.1103/PhysRevB.107.024415 |
| 4.0 | — | single_crystal | susceptibility | s-wave | 2023 | T1 | DOI: 10.1103/PhysRevB.107.174513 |
| 4.0 | — | single_crystal | susceptibility | s-wave | 2023 | T1 | 2305.03278 |
| 4.0 | — | polycrystal | susceptibility | — | 2011 | — | 1101.2226 |
| 4.0 | ambient | — | — | s-wave | 2018 | T1 | 1809.07789 |
| 4.0 | — | single_crystal | resistivity | — | 2026 | T1 | DOI: 10.1103/y3wb-hv8c |
| 4.0 | — | single_crystal | resistivity | — | 2025 | — | 2505.11285 |
| 4.0 | — | single_crystal | specific_heat | s-wave | 2023 | T1 | DOI: 10.1103/PhysRevB.107.024415 |
| 4.0 | — | single_crystal | resistivity | s-wave | 2023 | T1 | DOI: 10.1103/PhysRevB.107.174513 |
| 4.0 | — | single_crystal | resistivity, specific_heat | — | 2013 | T1 | DOI: 10.1103/PhysRevB.88.184508 |
| 4.0 | — | single_crystal | resistivity | — | 2013 | T1 | 1310.5247 |
| 4.0 | — | single_crystal | specific_heat | — | 2012 | T1 | 1207.3345 |
| 4.0 | — | polycrystal | specific_heat, susceptibility | — | 2013 | T1 | 1310.5247 |
| 3.9 | — | single_crystal | muSR | s-wave | 2023 | T1 | DOI: 10.1103/PhysRevB.107.174513 |
| 3.9 | — | single_crystal | muSR | s-wave | 2023 | T1 | 2305.03278 |
| 3.9 | — | single_crystal | resistivity | — | 2013 | T1 | DOI: 10.1103/PhysRevB.88.184508 |
| 3.9 | — | single_crystal | resistivity | — | 2013 | T1 | 1310.5247 |
| 3.8 | — | thin_film | resistivity | s-wave | 2020 | T1 | DOI: 10.1103/PhysRevResearch.2.013270 |
| 3.8 | — | thin_film | resistivity, susceptibility | s-wave | 2019 | T1 | 1911.10427 |
| 3.5 | ambient | thin_film | resistivity | unknown | 2025 | T2 | 2509.14590 |
| 3.5 | 1.4 | single_crystal | susceptibility | s-wave | 2018 | T1 | 1809.07789 |
| 3.0 | 2.1 | single_crystal | resistivity | s-wave | 2018 | T1 | 1809.07789 |
| — | ambient | thin_film | resistivity | unknown | 2025 | T2 | 2509.14590 |
| — | — | thin_film | resistivity | unknown | 2023 | T1 | 2309.10705 |
| — | — | single_crystal | resistivity | — | 2023 | T1 | 2303.08592 |
| — | — | thin_film | resistivity | — | 2023 | T2 | 2305.00958 |
| — | — | single_crystal | — | s-wave | 2023 | T1 | 2305.03278 |
| — | — | single_crystal | — | s-wave | 2018 | T1 | 1805.09811 |
| — | — | thin_film | STM | anisotropic s-wave | 2018 | T1 | 1804.09890 |
| — | — | single_crystal | specific_heat | — | 2012 | T1 | 1207.3345 |
Structure
- Crystal structure
- orthorhombic
- Space group
- Pnma (#62)
- Lattice a (Å)
- 8.880
- Lattice c (Å)
- 11.485
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- full_gap
- Hc2
- 0.7 T (H parallel b-axis)
- λ_eph (e–ph coupling)
- 0.91
- ω_log
- 98 K
Competing orders
- ρ(T) exponent
- 1.00
Samples & pressure
- Sample form
- single_crystal
- Substrate
- SiO2
- Pressure type
- none
- Doping type
- none