Tc max
4.4 K
Tc ambient
4.4 K
arXiv year
2011
Papers
22
Tc exp.
4.4 K
Tc theo.
4.0 K
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:1301.5355, confirmed by 2 papers
Evidence (44 records from 22 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 4.4 | ambient | thin_film | — | — | 2023 | T1 | 2306.12034 |
| 4.4 | — | thin_film | resistivity | — | 2013 | T1 | 1301.5355 |
| 4.3 | ambient |
Structure
- Crystal structure
- orthorhombic
- Space group
- Pnma (#62)
- Lattice a (Å)
- 8.880
- Lattice c (Å)
- 11.485
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- full_gap
- Hc2
- 0.7 T (H parallel b-axis)
- λ_eph (e–ph coupling)
- 0.91
- ω_log
- 98 K
Competing orders
- ρ(T) exponent
- 1.00
Samples & pressure
- Sample form
- single_crystal
- Substrate
- SiO2
- Pressure type
- none
- Doping type
- none