Pb

conventional · polycrystalline

ambient SC2D / interfacedisputed

Tc max

7.2 K

Tc ambient

7.2 K

Discovery

1997

Papers

Tc max measured at ambient, thin_film, resistivity, arXiv:cond-mat/0302173, confirmed by 4 papers

Evidence (65 records from 58 papers)

the flat columns above are aggregates — each line here is one paper's claim

Tc (K)	P (GPa)	Sample	Method	Pairing	Year	Paper
8.5	ambient	thin_film	—	—	2004	cond-mat/0406443
7.2	ambient	thin_film	susceptibility	—	2004	cond-mat/0407737
7.2	ambient	thin_film	susceptibility	—	2004	cond-mat/0407740
7.2	ambient	thin_film	resistivity	—	2003	cond-mat/0302173
7.2	ambient	thin_film	muSR	—	2005	cond-mat/0504626
7.2	ambient	thin_film	susceptibility	—	2004	cond-mat/0402299
7.2	ambient	thin_film	susceptibility	—	2004	cond-mat/0407737
7.2	ambient	thin_film	susceptibility	—	2004	cond-mat/0407740
7.2	ambient	thin_film	susceptibility	—	2004	cond-mat/0409391
7.2	ambient	thin_film	resistivity, susceptibility	s-wave	2003	cond-mat/0310203
7.2	ambient	thin_film	resistivity	—	2004	cond-mat/0412102
7.2	ambient	thin_film	resistivity	—	2005	cond-mat/0501253
7.2	ambient	thin_film	resistivity	—	2004	cond-mat/0404298
7.2	ambient	—	—	—	2004	cond-mat/0411719
7.2	ambient	thin_film	susceptibility	—	2003	cond-mat/0301118
7.2	ambient	polycrystal	susceptibility, muSR, neutron	—	2003	cond-mat/0305595
7.2	ambient	thin_film	magnetization	—	2003	cond-mat/0307092
7.2	ambient	thin_film	susceptibility	—	2002	cond-mat/0201302
7.2	ambient	thin_film	resistivity	—	2002	cond-mat/0202342
7.2	ambient	thin_film	susceptibility	—	2000	cond-mat/0012428
7.2	ambient	—	susceptibility	—	2004	cond-mat/0409064
7.2	ambient	thin_film	resistivity	—	1999	cond-mat/9907410
7.1	ambient	thin_film	muSR	—	2005	cond-mat/0504626
7.1	ambient	thin_film	susceptibility	—	2004	cond-mat/0402299
7.1	ambient	thin_film	susceptibility	—	2004	cond-mat/0407737
7.1	ambient	thin_film	susceptibility	—	2004	cond-mat/0409391
6.8	ambient	thin_film	STM	—	2001	cond-mat/0103229
4.5	ambient	—	STM	—	2003	cond-mat/0304560
2.0	ambient	thin_film	resistivity	—	2003	cond-mat/0302251
—	ambient	—	—	—	2004	cond-mat/0401374
—	ambient	thin_film	susceptibility	—	2004	cond-mat/0403550
—	ambient	—	STM	—	2004	cond-mat/0405365
—	ambient	—	resistivity	—	2004	cond-mat/0406516
—	ambient	—	susceptibility	s-wave	2004	cond-mat/0409505
—	ambient	polycrystal	susceptibility	—	2004	cond-mat/0409553
—	ambient	—	—	—	2004	cond-mat/0410473
—	—	—	resistivity	—	2004	cond-mat/0412311
—	ambient	thin_film	STM	—	2003	cond-mat/0302061
—	ambient	wire	resistivity	—	2003	cond-mat/0304193
—	ambient	polycrystal	susceptibility	—	2003	cond-mat/0304238
—	ambient	thin_film	STM	—	2003	cond-mat/0305572
—	ambient	—	ARPES	—	2003	cond-mat/0310119
—	ambient	thin_film	muSR	s-wave	2003	cond-mat/0310203
—	ambient	—	susceptibility	—	2003	cond-mat/0310459
—	ambient	polycrystal	resistivity	—	2002	cond-mat/0202104
—	ambient	thin_film	—	—	2002	cond-mat/0205105
—	ambient	—	ARPES	—	2002	cond-mat/0209476
—	ambient	polycrystal	susceptibility	—	2002	cond-mat/0210459
—	ambient	—	—	—	2002	cond-mat/0211643
—	ambient	—	IR spectroscopy	—	2001	cond-mat/0102455
—	ambient	—	STM	—	2001	cond-mat/0111365
—	ambient	—	resistivity, susceptibility	—	2001	cond-mat/0112486
—	ambient	wire	resistivity	—	2000	cond-mat/0009127
—	ambient	nanosized Pb bridge	resistivity	—	2000	cond-mat/0012087
—	ambient	thin_film	resistivity	—	1999	cond-mat/9909212
—	ambient	thin_film	resistivity	—	1999	cond-mat/9910413
—	ambient	thin_film	susceptibility	—	1999	cond-mat/9911033
—	ambient	thin_film	—	—	1999	cond-mat/9911034
—	ambient	thin_film	resistivity	—	1998	cond-mat/9803345
—	ambient	polycrystal	—	—	1998	cond-mat/9803124
—	ambient	wire	resistivity	—	1998	cond-mat/9806236
—	ambient	—	resistivity	s-wave	1998	cond-mat/9809305
—	ambient	—	resistivity	—	1998	cond-mat/9809352
—	ambient	thin_film	resistivity	—	1998	cond-mat/9811290
—	ambient	thin_film	—	—	1997	cond-mat/9706032

Structure

Crystal structure: polycrystalline

Superconducting parameters

Pairing symmetry: s-wave
Gap structure: full_gap
Hc2: 2.0 T (0 K, bulk)
λ_eph (e–ph coupling): —

Samples & pressure

Sample form: thin_film
Substrate: SiO_2
Pressure type: none
Doping type: none