Tc max
3.4 K
Tc ambient
—
arXiv year
1986
Papers
4
Tc exp.
3.4 K
Tc theo.
—
Evidence
experimental
Tc max measured at polycrystal, susceptibility, DOI: 10.1103/PhysRevLett.56.1291
Overlayer
pb/cu
Substrate
pb
Evidence (4 records from 4 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 3.4 | — | polycrystal | susceptibility | — | 1986 | T1 | DOI: 10.1103/PhysRevLett.56.1291 |
| — | — | thin_film | resistivity | — | 2000 | T1 | DOI: 10.1103/PhysRevB.62.4096 |
| — |
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- polycrystal
- Substrate
- silicon