Tc max
1.1 K
Tc ambient
—
arXiv year
2012
Papers
4
Tc exp.
1.1 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, DOI: 10.1103/PhysRevLett.109.157002
Overlayer
pd
Substrate
al
Evidence (4 records from 4 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 1.1 | — | thin_film | resistivity | — | 2012 | T1 | DOI: 10.1103/PhysRevLett.109.157002 |
| — | — | thin_film | resistivity | — | 2021 | T1 | DOI: 10.1103/PhysRevLett.126.126801 |
| — |
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- oxidized doped silicon wafer