Tc max
24.0 K
Tc ambient
24.0 K
Discovery
1999
Papers
14
Tc max measured at ambient, thin_film, STM, arXiv:cond-mat/0101433, confirmed by 2 papers
Evidence (19 records from 14 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Paper |
|---|---|---|---|---|---|---|
| 24.0 | ambient | single_crystal | susceptibility | — | 2002 | cond-mat/0211047 |
| 24.0 | ambient | thin_film | STM, resistivity | — | 2001 | cond-mat/0101433 |
| 22.5 | ambient | thin_film | resistivity | — | 2000 | cond-mat/0002341 |
| 22.5 | ambient | single_crystal | susceptibility | — | 2000 | cond-mat/0007013 |
| 22.0 | ambient | single_crystal | susceptibility | — | 2003 | cond-mat/0307008 |
| 22.0 | ambient | single_crystal | specific_heat | d-wave | 2002 | cond-mat/0208179 |
| 21.0 | ambient | thin_film | resistivity | — | 2004 | cond-mat/0406204 |
| 21.0 | ambient | — | susceptibility | — | 2004 | cond-mat/0408100 |
| 21.0 | ambient | — | — | s-wave | 2004 | cond-mat/0408105 |
| 20.0 | ambient | thin_film | susceptibility | d-wave | 2000 | cond-mat/0002300 |
| 19.0 | ambient | single_crystal | resistivity, susceptibility | d-wave | 2000 | cond-mat/0002300 |
| 15.0 | ambient | single_crystal | susceptibility | — | 2003 | cond-mat/0307008 |
| — | ambient | — | STM | unknown | 2004 | cond-mat/0408100 |
| — | ambient | single_crystal | — | — | 2003 | cond-mat/0307008 |
| — | ambient | single_crystal | susceptibility | — | 2002 | cond-mat/0209402 |
| — | ambient | single_crystal | susceptibility | d-wave | 2000 | cond-mat/0002301 |
| — | ambient | thin_film | — | d-wave | 2000 | cond-mat/0002341 |
| — | ambient | thin_film | — | d-wave | 2000 | cond-mat/0004185 |
| — | ambient | single_crystal | susceptibility | d-wave | 1999 | cond-mat/9912001 |
Structure
- Crystal structure
- T' structure
Superconducting parameters
- Pairing symmetry
- d-wave
- Gap structure
- nodal
- Hc2
- 8.0 T (at T=2K)
- λ_eph (e–ph coupling)
- —
Competing orders
- Competing order
- SDW
- T_SDW
- 100.0 K
- ρ(T) exponent
- 2.00
Samples & pressure
- Sample form
- single_crystal
- Substrate
- LaAlO_3
- Pressure type
- none
- Doping type
- electron
- Doping level
- 0.150