Tc max
24.0 K
Tc ambient
24.0 K
Discovery
2000
Papers
13
Tc max measured at ambient, thin_film, susceptibility, arXiv:cond-mat/0108545, confirmed by 2 papers
Evidence (21 records from 13 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Paper |
|---|---|---|---|---|---|---|
| 25.0 | ambient | single_crystal | resistivity | — | 2003 | cond-mat/0302223 |
| 24.0 | ambient | thin_film | susceptibility, resistivity | s-wave | 2001 | cond-mat/0108545 |
| 23.5 | ambient | single_crystal | susceptibility | — | 2005 | cond-mat/0501362 |
| 22.5 | ambient | thin_film | susceptibility, resistivity | d-wave | 2001 | cond-mat/0108545 |
| 21.0 | ambient | thin_film | susceptibility, resistivity | s-wave | 2003 | cond-mat/0303372 |
| 20.0 | ambient | — | — | d-wave | 2002 | cond-mat/0211366 |
| 20.0 | ambient | single_crystal | resistivity, susceptibility | — | 2001 | cond-mat/0112269 |
| 16.0 | ambient | single_crystal | susceptibility | — | 2003 | cond-mat/0302223 |
| 14.0 | ambient | thin_film | susceptibility, resistivity | s-wave | 2003 | cond-mat/0303372 |
| 12.2 | ambient | thin_film | — | d-wave | 2001 | cond-mat/0111544 |
| 12.0 | ambient | thin_film | susceptibility, resistivity | d-wave | 2003 | cond-mat/0303372 |
| 11.8 | ambient | thin_film | — | s-wave | 2001 | cond-mat/0111544 |
| — | ambient | thin_film | susceptibility | — | 2005 | cond-mat/0501362 |
| — | ambient | — | — | — | 2004 | cond-mat/0408026 |
| — | ambient | thin_film | susceptibility | — | 2003 | cond-mat/0301174 |
| — | ambient | — | thermal conductivity | — | 2003 | cond-mat/0301207 |
| — | ambient | single_crystal | muSR | — | 2003 | cond-mat/0302223 |
| — | ambient | thin_film | — | d-wave | 2003 | cond-mat/0303372 |
| — | ambient | thin_film | resistivity | — | 2003 | cond-mat/0303469 |
| — | ambient | — | — | d-wave | 2000 | cond-mat/0004393 |
| — | ambient | — | — | d-wave | 2000 | cond-mat/0004453 |
Structure
- Crystal structure
- tetragonal
- Phase
- cuprate_214
Superconducting parameters
- Hc2
- 13.5 T (0.3 K, H || c-axis)
- λ_eph (e–ph coupling)
- —
Competing orders
- Competing order
- AFM
- ρ(T) exponent
- 1.70
Samples & pressure
- Sample form
- thin_film
- Substrate
- SrTiO_3
- Pressure type
- none
- Doping type
- electron
- Doping level
- 0.150