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RbNi2Se2

ThCr2Si2-type

ambient SC
Tc max
1.2 K
Tc ambient
1.2 K
arXiv year
2022
Papers
2
Tc exp.
1.2 K
Tc theo.
Evidence
experimental

Tc max measured at single_crystal, susceptibility, DOI: 10.1103/PhysRevB.106.094511, confirmed by 2 papers

Evidence (4 records from 2 papers)

the flat columns above are aggregates — each line here is one paper's claim
Tc (K)P (GPa)SampleMethodPairingYearTierPaper
1.2single_crystalsusceptibility2022T1DOI: 10.1103/PhysRevB.106.094511
1.2ambientsingle_crystalsusceptibility2022T12205.00116
0.9single_crystalspecific_heat2022T1DOI: 10.1103/PhysRevB.106.094511
0.9ambientsingle_crystalspecific_heat2022T12205.00116

Structure

Crystal structure
ThCr2Si2-type
Space group
I4/mmm
Lattice a (Å)
3.927
Lattice c (Å)
13.865

Superconducting parameters

Gap structure
multi_gap
Hc2
1.4 T (0 K)
λ_eph (e–ph coupling)
0.49

Competing orders

ρ(T) exponent
2.00

Samples & pressure

Sample form
single_crystal