Tc max
6.8 K
Tc ambient
6.8 K
arXiv year
2014
Papers
12
Tc exp.
6.8 K
Tc theo.
—
Evidence
experimental
Tc max measured at single_crystal, resistivity, DOI: 10.1103/PhysRevB.97.224506, confirmed by 2 papers
Evidence (16 records from 12 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 6.8 | — | single_crystal | resistivity, susceptibility, specific_heat | s-wave | 2018 | T1 | DOI: 10.1103/PhysRevB.97.224506 |
| 6.8 | — | single_crystal | resistivity, susceptibility, specific_heat | s-wave | 2018 | T3 | 1806.03768 |
| 6.8 | — | polycrystal | muSR | s-wave | 2014 | T1 | 1401.2108 |
| 6.8 | ambient | polycrystal | resistivity | — | 2017 | T1 | 1709.01328 |
| 6.8 | — | polycrystal | resistivity, specific_heat | s-wave | 2017 | T1 | DOI: 10.1103/PhysRevB.96.064521 |
| 6.8 | ambient | polycrystal | specific_heat, magnetization | s-wave | 2017 | T1 | 1709.01328 |
| 6.8 | — | polycrystal | susceptibility, specific_heat, muSR | s-wave | 2014 | T1 | DOI: 10.1103/PhysRevLett.112.107002 |
| 6.8 | — | polycrystal | magnetization, specific_heat | — | 2014 | T1 | 1401.2108 |
| 6.7 | — | polycrystal | susceptibility | s-wave | 2016 | T1 | DOI: 10.1103/PhysRevB.94.214513 |
| 6.7 | — | polycrystal | susceptibility | s-wave | 2016 | T1 | 1612.02520 |
| 6.7 | — | polycrystal | susceptibility | s-wave | 2017 | T1 | DOI: 10.1103/PhysRevB.96.064521 |
| 6.7 | — | polycrystal | resistivity | — | 2016 | T1 | DOI: 10.1103/PhysRevB.94.144515 |
| 6.6 | — | polycrystal | susceptibility | — | 2016 | T1 | DOI: 10.1103/PhysRevB.94.144515 |
| 5.9 | — | thin_film | resistivity | s-wave | 2020 | T1 | 2012.12058 |
| 4.7 | — | thin_film | resistivity | — | 2023 | T1 | DOI: 10.1103/PhysRevB.108.L180503 |
| — | — | single_crystal | — | unknown | 2017 | T2 | 1704.06166 |
Structure
- Crystal structure
- α-Mn
- Space group
- I4-3m (#217)
- Lattice a (Å)
- 9.699
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- full_gap
- Hc2
- 12.2 T (0 K)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- polycrystal
- Substrate
- oxidized Si
- Pressure type
- none