Tc max
1.3 K
Tc ambient
1.3 K
arXiv year
2023
Papers
2
Tc exp.
1.3 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:2310.09526, confirmed by 2 papers
Evidence (6 records from 2 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 1.3 | — | thin_film | resistivity | s-wave | 2024 | T1 | DOI: 10.1103/PhysRevMaterials.8.074801 |
| 1.3 | — | thin_film | resistivity | s-wave | 2023 | T1 | 2310.09526 |
| 0.9 |
Structure
- Crystal structure
- distorted cubic
- Lattice a (Å)
- 4.559
- Lattice c (Å)
- 4.559
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- full_gap
- Hc2
- 4.1 T (0 K)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- polycrystalline SiO2