RuSr₂GdCu₂O₈

cuprate · tetragonal · 1212

View structure on Materials Projectmp-1194240· +2 polymorphs

ambient SCunconventionalcompeting orderdisputed

Tc max

57.0 K

Tc ambient

56.0 K

arXiv year

1999

Papers

Tc exp.

57.0 K

Tc theo.

—

Evidence

experimental

Tc max measured at single_crystal, susceptibility, arXiv:cond-mat/0401606, confirmed by 2 papers

Evidence (91 records from 58 papers)

the flat columns above are aggregates — each line here is one paper's claim

Tc (K)	P (GPa)	Sample	Method	Pairing	Year	Tier	Paper
57.0	—	single_crystal	susceptibility	—	2004	T2	cond-mat/0401606
57.0	—	single_crystal	susceptibility	—	2004	T1	DOI: 10.1103/PhysRevLett.92.117001
56.0	—	polycrystal	resistivity	—	2008	T2	0811.3457
56.0	—	polycrystal	resistivity	—	2005	T2	cond-mat/0507014
56.0	—	polycrystal	resistivity	—	2005	T1	DOI: 10.1103/PhysRevB.72.174508
55.0	—	single_crystal	resistivity	—	2004	T2	cond-mat/0401606
54.0	—	single_crystal	resistivity	—	2005	T2	cond-mat/0508044
54.0	—	single_crystal	resistivity	—	2004	T2	cond-mat/0401606
54.0	—	single_crystal	resistivity	—	2004	T1	DOI: 10.1103/PhysRevLett.92.117001
53.0	—	polycrystal	resistivity	—	2002	T1	DOI: 10.1103/PhysRevB.65.180507
53.0	—	polycrystal	resistivity	—	2002	T1	cond-mat/0204070
52.0	—	polycrystal	resistivity	—	2003	T1	DOI: 10.1103/PhysRevB.67.104514
52.0	—	polycrystal	resistivity	—	2001	T1	DOI: 10.1103/PhysRevB.63.180509
51.0	—	single_crystal	resistivity	—	2005	T2	cond-mat/0508044
51.0	—	single_crystal	resistivity	—	2004	T2	cond-mat/0401606
51.0	—	single_crystal	resistivity	—	2004	T1	DOI: 10.1103/PhysRevLett.92.117001
50.0	—	polycrystal	resistivity	—	2007	T1	cond-mat/0702078
50.0	—	single_crystal	susceptibility	—	2005	T2	cond-mat/0508044
50.0	—	—	resistivity, susceptibility	—	2003	T2	cond-mat/0304263
50.0	—	polycrystal	resistivity	—	2002	T1	DOI: 10.1103/PhysRevB.66.104509
50.0	—	polycrystal	resistivity	—	1999	T2	cond-mat/9909263
48.0	—	polycrystal	resistivity	—	2001	T1	DOI: 10.1103/PhysRevB.63.212507
47.0	—	polycrystal	susceptibility	—	2002	T1	DOI: 10.1103/PhysRevB.65.174514
46.0	ambient	polycrystal	resistivity, specific_heat	—	2000	T1	DOI: 10.1103/PhysRevB.61.R6471
46.0	—	polycrystal	resistivity	—	1999	T1	DOI: 10.1103/PhysRevB.60.R12597
46.0	—	polycrystal	resistivity, specific_heat, susceptibility	—	1999	T1	DOI: 10.1103/PhysRevB.59.R11679
45.0	—	single_crystal	susceptibility	—	2008	T1	0812.3024
45.0	—	polycrystal	resistivity	—	2004	T1	DOI: 10.1103/PhysRevB.70.052503
45.0	—	polycrystal	resistivity	—	2003	T1	DOI: 10.1103/PhysRevB.68.144512
45.0	—	polycrystal	susceptibility	—	2003	T1	cond-mat/0301302
45.0	—	polycrystal	resistivity	—	2002	T1	DOI: 10.1103/PhysRevB.65.212506
45.0	—	polycrystal	—	—	2002	T1	DOI: 10.1103/PhysRevB.65.174514
45.0	ambient	polycrystal	resistivity	—	2002	T2	cond-mat/0207265
45.0	—	polycrystal	resistivity	—	2001	T3	cond-mat/0112406
45.0	—	polycrystal	resistivity	—	2001	T1	DOI: 10.1103/PhysRevB.63.184505
45.0	—	polycrystal	resistivity	—	2001	T1	DOI: 10.1103/PhysRevB.63.224512
45.0	—	polycrystal	resistivity	—	2000	T2	cond-mat/0012510
45.0	—	polycrystal	susceptibility, resistivity	—	2000	T1	DOI: 10.1103/PhysRevB.61.R14960
45.0	ambient	polycrystal	susceptibility	—	2000	T1	DOI: 10.1103/PhysRevB.61.R6471
43.0	—	polycrystal	resistivity	d-wave	2006	T1	DOI: 10.1103/PhysRevB.73.064514
43.0	—	polycrystal	resistivity	—	2005	T2	cond-mat/0508002
39.0	—	polycrystal	susceptibility	—	2008	T2	0811.3457
39.0	—	polycrystal	resistivity, susceptibility	—	2005	T2	cond-mat/0507014
39.0	—	polycrystal	resistivity, susceptibility	—	2005	T1	DOI: 10.1103/PhysRevB.72.174508
37.0	—	polycrystal	resistivity	—	2006	T1	DOI: 10.1103/PhysRevB.73.224524
37.0	—	polycrystal	resistivity	—	1999	T1	DOI: 10.1103/PhysRevB.60.R12597
37.0	—	polycrystal	resistivity	—	1999	T1	DOI: 10.1103/PhysRevB.60.7512
36.0	ambient	polycrystal	resistivity	—	2000	T1	DOI: 10.1103/PhysRevB.61.R6471
36.0	—	polycrystal	resistivity	—	1999	T1	DOI: 10.1103/PhysRevB.60.14605
35.0	—	polycrystal	susceptibility	—	2002	T1	DOI: 10.1103/PhysRevB.65.174514
35.0	—	polycrystal	susceptibility	—	2000	T1	DOI: 10.1103/PhysRevB.61.6401
35.0	—	polycrystal	susceptibility	—	2000	T1	DOI: 10.1103/PhysRevB.61.R14964
35.0	—	polycrystal	resistivity	—	1999	T1	DOI: 10.1103/PhysRevB.59.R11679
34.0	—	polycrystal	resistivity	—	2002	T1	DOI: 10.1103/PhysRevB.65.180507
34.0	—	polycrystal	resistivity	—	2002	T1	cond-mat/0204070
34.0	—	polycrystal	resistivity	—	2001	T1	DOI: 10.1103/PhysRevB.63.180509
32.0	—	polycrystal	resistivity	—	2001	T1	DOI: 10.1103/PhysRevB.63.184505
32.0	—	polycrystal	resistivity	—	2000	T2	cond-mat/0012510
30.0	—	polycrystal	susceptibility, resistivity, specific_heat	—	2006	—	cond-mat/0511323
30.0	—	thin_film	resistivity	—	2005	T1	DOI: 10.1103/PhysRevB.71.134523
30.0	—	polycrystal	resistivity	d-wave	2005	T2	cond-mat/0508002
30.0	—	polycrystal	resistivity	d-wave	2005	T2	cond-mat/0509346
30.0	—	polycrystal	susceptibility	—	2003	T1	DOI: 10.1103/PhysRevB.68.144518
30.0	—	polycrystal	resistivity, susceptibility	—	2002	T1	DOI: 10.1103/PhysRevB.66.104509
30.0	ambient	polycrystal	resistivity	—	2002	T2	cond-mat/0207265
30.0	ambient	—	resistivity	—	2000	T2	cond-mat/0002212
29.0	—	polycrystal	susceptibility	—	2004	T1	DOI: 10.1103/PhysRevB.70.052503
25.0	ambient	—	susceptibility	—	2000	T2	cond-mat/0002212
24.0	—	polycrystal	resistivity	d-wave	2006	T1	DOI: 10.1103/PhysRevB.73.064514
24.0	—	polycrystal	resistivity	—	2005	T2	cond-mat/0508002
20.0	—	polycrystal	resistivity	—	1999	T1	DOI: 10.1103/PhysRevB.60.7512
19.0	—	polycrystal	susceptibility	—	2003	T1	cond-mat/0301302
19.0	—	polycrystal	resistivity	—	1999	T1	DOI: 10.1103/PhysRevB.59.R11679
18.0	—	polycrystal	susceptibility	—	2000	T1	DOI: 10.1103/PhysRevB.61.6401
16.0	—	polycrystal	resistivity, susceptibility, muSR	—	1999	T1	DOI: 10.1103/PhysRevB.59.14099
16.0	—	polycrystal	susceptibility	—	1999	T2	cond-mat/9901084
8.0	ambient	—	resistivity	—	2000	T2	cond-mat/0002212
—	—	polycrystal	resistivity, specific_heat	—	2010	—	1001.1239
—	—	polycrystal	resistivity	—	2009	T1	0905.1721
—	—	polycrystal	susceptibility	—	2008	T1	0810.5588
—	—	—	resistivity	—	2007	T1	cond-mat/0701183
—	—	polycrystal	STM	d-wave	2005	T2	cond-mat/0508003
—	—	polycrystal	—	d-wave	2003	T1	cond-mat/0309553
—	—	polycrystal	resistivity	—	2003	T1	cond-mat/0311515
—	—	polycrystal	resistivity, specific_heat	—	2003	T2	cond-mat/0302499
—	—	—	susceptibility, resistivity	—	2002	T1	cond-mat/0204185
—	—	polycrystal	susceptibility	—	2002	T1	cond-mat/0205462
—	—	polycrystal	susceptibility	—	2002	T2	cond-mat/0205463
—	—	polycrystal	susceptibility	—	2001	T1	cond-mat/0107388
—	—	—	resistivity, susceptibility	—	2001	T3	cond-mat/0112412
—	—	—	resistivity, specific_heat	—	1999	T2	cond-mat/9911135

Structure

Crystal structure: tetragonal
Space group: P4/mmm
Phase: 1212
Lattice a (Å): 5.428
Lattice c (Å): 11.589

Superconducting parameters

Pairing symmetry: d-wave
Gap structure: nodal
Hc2: 133.0 T (0 K, average)
λ_eph (e–ph coupling): —

Competing orders

Competing order: AFM
T_AFM: 136.0 K
ρ(T) exponent: 1.00

Samples & pressure

Sample form: polycrystal
Substrate: SrTiO3
Pressure type: none
Doping type: hole
Doping level: 0.070