Tc max
4.9 K
Tc ambient
4.9 K
arXiv year
1986
Papers
5
Tc exp.
4.9 K
Tc theo.
—
Evidence
experimental
Tc max measured at ambient, polycrystal, specific_heat, DOI: 10.1103/PhysRevB.35.6659
Evidence (5 records from 5 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 4.9 | ambient | polycrystal | specific_heat | — | 1987 | T1 | DOI: 10.1103/PhysRevB.35.6659 |
| 4.8 | ambient | polycrystal | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevB.33.5062 |
| 3.5 |
Structure
- Crystal structure
- Sc5Co4Si10-type
- Space group
- P4/mbm
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- full_gap
- λ_eph (e–ph coupling)
- 0.47
Samples & pressure
- Sample form
- polycrystal
- Pressure type
- none