Tc max
8.2 K
Tc ambient
—
arXiv year
1986
Papers
18
Tc exp.
8.2 K
Tc theo.
18.7 K
Evidence
mixed
Tc max measured at P=15 GPa, single_crystal, resistivity, DOI: 10.1103/PhysRevB.34.3150, confirmed by 2 papers
Evidence (32 records from 18 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 80.0 | — | — | — | d-wave | 2013 | T1 | DOI: 10.1103/PhysRevLett.111.066804 |
| 18.7 | — | thin_film | — | — | 2015 | — | 1502.00021 |
| 10.0 | — | — | — |
Structure
- Crystal structure
- beta-Sn
- Space group
- I41/amd
Superconducting parameters
- λ_eph (e–ph coupling)
- 0.40
- ω_log
- 676 K
Samples & pressure
- Substrate
- Silicon On Insulator
- Pressure type
- hydrostatic
- Doping type
- hole
- Doping level
- 0.064