Tc max
8.2 K
Tc ambient
—
arXiv year
1986
Papers
18
Tc exp.
8.2 K
Tc theo.
18.7 K
Evidence
mixed
Tc max measured at P=15 GPa, single_crystal, resistivity, DOI: 10.1103/PhysRevB.34.3150, confirmed by 2 papers
Evidence (32 records from 18 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 80.0 | — | — | — | d-wave | 2013 | T1 | DOI: 10.1103/PhysRevLett.111.066804 |
| 18.7 | — | thin_film | — | — | 2015 | — | 1502.00021 |
| 10.0 | — | — | — | — | 2013 | T1 | 1305.3368 |
| 8.4 | 21.0 | thin_film | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevB.33.7820 |
| 8.2 | 15.0 | single_crystal | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevB.34.3150 |
| 6.8 | 12.0 | thin_film | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevB.33.7820 |
| 6.3 | 12.0 | single_crystal | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevB.34.3150 |
| 5.2 | 17.0 | powder | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevB.33.7820 |
| 4.9 | 40.0 | single_crystal | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevLett.57.2741 |
| 3.9 | 12.0 | powder | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevB.33.7820 |
| 3.5 | 41.0 | single_crystal | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevLett.57.2741 |
| 3.3 | 37.0 | single_crystal | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevLett.57.2741 |
| 3.0 | — | — | — | — | 2004 | T2 | cond-mat/0404447 |
| 2.8 | — | — | — | — | 2007 | T2 | cond-mat/0701194 |
| 2.0 | — | — | — | — | 1988 | T1 | DOI: 10.1103/PhysRevB.37.6344 |
| 1.0 | — | — | — | — | 2024 | T3 | 2406.17511 |
| 0.6 | ambient | thin_film | resistivity | s-wave | 2010 | T1 | DOI: 10.1103/PhysRevB.82.140505 |
| 0.5 | — | — | — | — | 2024 | T3 | 2406.17511 |
| 0.5 | ambient | thin_film | resistivity | s-wave | 2010 | T1 | DOI: 10.1103/PhysRevB.82.140505 |
| 0.5 | — | thin_film | resistivity | — | 2024 | T3 | 2406.17511 |
| 0.5 | ambient | thin_film | STM | s-wave | 2010 | T1 | DOI: 10.1103/PhysRevB.82.140505 |
| 0.5 | ambient | thin_film | resistivity | — | 2021 | T3 | 2101.11125 |
| 0.3 | ambient | thin_film | resistivity | s-wave | 2010 | T1 | DOI: 10.1103/PhysRevB.82.140505 |
| 0.3 | — | — | — | — | 2004 | T2 | cond-mat/0404447 |
| 0.2 | — | — | — | — | 2007 | T2 | cond-mat/0701194 |
| 0.2 | — | thin_film | — | — | 2016 | T1 | DOI: 10.1103/PhysRevB.94.180505 |
| 0.0 | — | thin_film | resistivity | — | 1998 | T1 | DOI: 10.1103/PhysRevB.58.8214 |
| — | — | wire | — | — | 2020 | T1 | DOI: 10.1103/PhysRevB.101.125414 |
| — | — | thin_film | — | — | 2018 | — | 1802.06272 |
| — | — | — | — | — | 2007 | T2 | cond-mat/0701194 |
| — | — | — | — | — | 1986 | T1 | DOI: 10.1103/PhysRevB.34.4552 |
| — | — | single_crystal | resistivity | — | 1986 | T1 | DOI: 10.1103/PhysRevLett.56.2770 |
Structure
- Crystal structure
- beta-Sn
- Space group
- I41/amd
Superconducting parameters
- λ_eph (e–ph coupling)
- 0.40
- ω_log
- 676 K
Samples & pressure
- Substrate
- Silicon On Insulator
- Pressure type
- hydrostatic
- Doping type
- hole
- Doping level
- 0.064