Tc max
0.7 K
Tc ambient
0.6 K
arXiv year
2009
Papers
6
Tc exp.
0.7 K
Tc theo.
—
Evidence
experimental
Tc max measured at single_crystal, resistivity, DOI: 10.1103/PhysRevB.96.024503, confirmed by 2 papers
Evidence (9 records from 6 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 0.8 | ambient | thin_film | resistivity | — | 2013 | T1 | DOI: 10.1103/PhysRevB.88.064508 |
| 0.7 | — | single_crystal | resistivity | — | 2017 | T1 | DOI: 10.1103/PhysRevB.96.024503 |
| 0.6 |
Superconducting parameters
- Hc2
- 0.1 T (0 K)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- silicon
- Pressure type
- none
- Doping type
- hole
- Doping level
- 0.080