Tc max
3.7 K
Tc ambient
3.7 K
arXiv year
1986
Papers
99
Tc exp.
4.7 K
Tc theo.
4.0 K
Evidence
experimental
Tc max measured at thin_film, arXiv:1912.03242, confirmed by 3 papers
Evidence (115 records from 99 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 5.0 | — | — | — | — | 2025 | — | 2501.17465 |
| 4.7 | — | thin_film | STM | — | 2020 | T1 | DOI: 10.1103/PhysRevLett.125.117001 |
| 4.7 | — | thin_film | — |
Structure
- Crystal structure
- beta-Sn
- Space group
- I41/amd
Superconducting parameters
- Gap structure
- full_gap
- Hc2
- 4.0 T (at 300 mK)
- λ_eph (e–ph coupling)
- 0.74
Samples & pressure
- Sample form
- thin_film
- Substrate
- Si(111)
- Pressure type
- none
- Doping type
- none
- Doping level
- 0.100