Tc max
4.8 K
Tc ambient
—
arXiv year
2018
Papers
4
Tc exp.
4.8 K
Tc theo.
—
Evidence
experimental
Tc max measured at thin_film, STM, arXiv:1802.08434, confirmed by 2 papers
Evidence (4 records from 4 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 4.8 | — | thin_film | STM | s-wave | 2018 | — | 1802.08434 |
| 4.8 | — | thin_film | STM | s-wave | 2018 | T1 | DOI: 10.1103/PhysRevB.98.220508 |
| 3.9 | — | — | resistivity |
Structure
- Crystal structure
- CdI2 type structure
- Lattice a (Å)
- 3.820
- Lattice c (Å)
- 6.100
Superconducting parameters
- Pairing symmetry
- s-wave
- Gap structure
- full_gap
- Hc2
- 1.1 T (0.4 K)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- graphene