Tc max
4.7 K
Tc ambient
—
arXiv year
2012
Papers
1
Tc exp.
4.7 K
Tc theo.
—
Evidence
experimental
Tc max measured at single_crystal, resistivity, DOI: 10.1103/PhysRevB.85.184520
Evidence (1 record from 1 paper)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 4.7 | — | single_crystal | resistivity | — | 2012 | T1 | DOI: 10.1103/PhysRevB.85.184520 |
Structure
- Crystal structure
- CaBe2Ge2-type
- Lattice c (Å)
- 9.824
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Competing orders
- Competing order
- CDW
- T_CDW
- 375.0 K
Samples & pressure
- Sample form
- single_crystal
- Pressure type
- chemical
- Doping type
- isovalent
- Doping level
- 0.060