Tc max
16.0 K
Tc ambient
16.0 K
arXiv year
2010
Papers
2
Tc exp.
16.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at single_crystal, resistivity, DOI: 10.1103/PhysRevB.86.140505, confirmed by 2 papers
Evidence (3 records from 2 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 16.0 | — | single_crystal | resistivity | — | 2012 | T1 | DOI: 10.1103/PhysRevB.86.140505 |
| 16.0 | — | single_crystal | resistivity, susceptibility | — | 2010 | T1 | DOI: 10.1103/PhysRevB.82.144518 |
| 15.0 | — | single_crystal | specific_heat | — | 2010 | T1 | DOI: 10.1103/PhysRevB.82.144518 |
Structure
- Crystal structure
- ThCr2Si2
Superconducting parameters
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- single_crystal
- Doping level
- 0.160