Tc max
37.0 K
Tc ambient
25.0 K
arXiv year
2008
Papers
21
Tc exp.
38.0 K
Tc theo.
—
Evidence
experimental
Tc max measured at resistivity, arXiv:0810.1377, confirmed by 2 papers
Evidence (26 records from 21 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 40.0 | 2.5 | polycrystal | resistivity | — | 2008 | T1 | 0807.4283 |
| 38.0 | — | — | resistivity | — | 2008 | — | 0810.1377 |
| 34.1 | 3.8 | single_crystal | resistivity | — | 2008 | T1 | 0810.4856 |
| 30.1 | 4.5 | single_crystal | resistivity | — | 2009 | T1 | 0904.4631 |
| 30.0 | 5.4 | single_crystal | susceptibility | unknown | 2009 | T1 | DOI: 10.1103/PhysRevLett.103.257002 |
| 30.0 | 4.2 | single_crystal | resistivity | — | 2008 | T1 | 0810.4856 |
| 27.0 | 5.4 | single_crystal | resistivity | unknown | 2009 | T1 | DOI: 10.1103/PhysRevLett.103.257002 |
| 27.0 | — | — | — | — | 2008 | — | 0807.1896 |
| 25.0 | — | thin_film | — | — | 2009 | T3 | 0903.3710 |
| 25.0 | ambient | thin_film | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.80.052501 |
| 21.0 | ambient | single_crystal | resistivity, susceptibility | — | 2009 | T1 | DOI: 10.1103/PhysRevLett.103.037005 |
| 21.0 | ambient | single_crystal | susceptibility, resistivity | — | 2009 | T1 | 0907.4141 |
| 21.0 | ambient | thin_film | resistivity | — | 2009 | T1 | DOI: 10.1103/PhysRevB.80.052501 |
| 21.0 | ambient | single_crystal | resistivity, susceptibility | — | 2008 | T1 | 0811.3940 |
| 20.0 | — | thin_film | resistivity | — | 2008 | T1 | 0808.1985 |
| — | — | — | — | — | 2024 | T1 | DOI: 10.1103/PhysRevResearch.6.013121 |
| — | — | — | — | — | 2023 | — | 2309.12615 |
| — | — | single_crystal | resistivity | — | 2015 | T1 | DOI: 10.1103/PhysRevB.92.155112 |
| — | — | single_crystal | — | — | 2013 | T3 | 1310.6071 |
| — | — | thin_film | susceptibility, resistivity | — | 2009 | — | 0907.4227 |
| — | 5.4 | single_crystal | NMR | unknown | 2009 | T1 | 0906.4740 |
| — | 3.3 | single_crystal | resistivity | — | 2009 | T1 | 0904.4488 |
| — | 6.0 | single_crystal | resistivity | — | 2009 | T1 | 0905.0968 |
| — | — | thin_film | resistivity | — | 2008 | — | 0811.3994 |
| — | 4.2 | single_crystal | resistivity | — | 2008 | T1 | 0810.4856 |
| — | 2.9 | single_crystal | resistivity | — | 2008 | T1 | 0807.4283 |
Structure
- Crystal structure
- ThCr2Si2-type
- Space group
- I4/mmm
- Lattice a (Å)
- 3.929
- Lattice c (Å)
- 12.320
Superconducting parameters
- Hc2
- 86.0 T (0 K, perpendicular direction)
- λ_eph (e–ph coupling)
- —
Competing orders
- Competing order
- AFM
- T_SDW
- 200.0 K
- T_AFM
- 198.0 K
Samples & pressure
- Sample form
- single_crystal
- Substrate
- (La, Sr)(Al, Ta)O3
- Pressure type
- hydrostatic
- Doping type
- none