Tc max
0.9 K
Tc ambient
0.9 K
arXiv year
2013
Papers
3
Tc exp.
0.9 K
Tc theo.
2.0 K
Evidence
experimental
Tc max measured at single_crystal, resistivity, DOI: 10.1103/PhysRevB.87.224510, confirmed by 2 papers
Evidence (3 records from 3 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 2.0 | — | — | — | — | 2016 | T1 | DOI: 10.1103/PhysRevB.93.054506 |
| 0.9 | — | single_crystal | resistivity, specific_heat | s-wave | 2013 | T1 | DOI: 10.1103/PhysRevB.87.224510 |
| 0.9 | — | single_crystal | resistivity, susceptibility, specific_heat | s-wave | 2013 | T1 | 1304.7148 |
Structure
- Crystal structure
- ThCr2Si2-type
- Space group
- I4/mmm
- Lattice a (Å)
- 4.376
- Lattice c (Å)
- 10.167
Superconducting parameters
- Pairing symmetry
- s-wave
- λ_eph (e–ph coupling)
- 0.66
Samples & pressure
- Sample form
- single_crystal