Tc max
8.8 K
Tc ambient
8.2 K
arXiv year
2011
Papers
13
Tc exp.
8.8 K
Tc theo.
27.0 K
Evidence
experimental
Tc max measured at thin_film, resistivity, arXiv:1206.4579, confirmed by 3 papers
Evidence (16 records from 13 papers)
the flat columns above are aggregates — each line here is one paper's claim| Tc (K) | P (GPa) | Sample | Method | Pairing | Year | Tier | Paper |
|---|---|---|---|---|---|---|---|
| 27.0 | — | — | — | — | 2021 | T1 | 2104.12157 |
| 9.3 | ambient | thin_film | resistivity | — | 2012 | T1 | 1210.5395 |
| 8.8 | — | thin_film | resistivity | — | 2012 | T1 | 1206.4579 |
| 8.8 | — | thin_film | resistivity | — | 2012 | T1 | DOI: 10.1103/PhysRevB.86.140506 |
| 8.8 | ambient | thin_film | resistivity | — | 2012 | T1 | 1210.5395 |
| 8.2 | — | thin_film | resistivity | — | 2011 | — | 1110.4576 |
| 8.0 | — | thin_film | resistivity | — | 2013 | T1 | 1302.4579 |
| 6.4 | — | thin_film | resistivity | — | 2017 | T1 | 1705.01732 |
| 6.0 | — | thin_film | resistivity | — | 2013 | T1 | 1302.4579 |
| 4.1 | — | thin_film | resistivity | — | 2026 | T1 | 2601.10480 |
| 3.6 | — | thin_film | resistivity | — | 2025 | — | 2502.18723 |
| 3.0 | — | thin_film | resistivity | — | 2023 | — | 2309.12520 |
| 2.8 | — | thin_film | resistivity | — | 2017 | T1 | 1705.01732 |
| 2.8 | — | thin_film | resistivity | — | 2013 | T1 | DOI: 10.1103/PhysRevB.88.104510 |
| 2.8 | — | thin_film | resistivity | — | 2013 | T1 | 1303.0466 |
| — | — | thin_film | — | — | 2013 | T1 | 1302.6155 |
Structure
- Crystal structure
- face-centered cubic
- Space group
- Fm3m
- Lattice a (Å)
- 4.306
Superconducting parameters
- Hc2
- 18.4 T (0 K)
- λ_eph (e–ph coupling)
- —
Samples & pressure
- Sample form
- thin_film
- Substrate
- sapphire
- Pressure type
- none
- Doping type
- electron
- Doping level
- 1.000